APT30DQ100BCTG Microsemi Power Products Group, APT30DQ100BCTG Datasheet - Page 3

• Manufacturer Part Number: APT30DQ100BCTG
• Description: DIODE ULT FAST 30A 1000V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT30DQ100BCTG

• Voltage - Forward (vf) (max) @ If: 3V @ 30A
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Current - Average Rectified (io) (per Diode): 30A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Reverse Recovery Time (trr): 240ns
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Diode Configuration: 1 Pair Common Cathode
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL PERFORMANCE CURVES
Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
4000
3500
3000
2500
2000
1500
1000
100
500
160
140
120
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.2
1.0
0.8
0.6
0.4
0.2
0.0
90
80
70
60
50
40
30
20
10
80
60
40
20
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
t
T
rr
V
V
J
R
F
T
F
= 125°C
0.5
/dt, CURRENT RATE OF CHANGE (A/µs)
= 667V
, ANODE-TO-CATHODE VOLTAGE (V)
J
200
, JUNCTION TEMPERATURE (°C)
25
T
J
V
T
I
RRM
1.0
R
= 125°C
J
, REVERSE VOLTAGE (V)
= 175°C
400
50
1.5
Q
60A
rr
10
600
2.0
75
2.5
800
100
15A
T
J
T
3.0
t
= -55°C
J
rr
= 25°C
1000
Q
125
30A
rr
100 200
3.5 4.0
1200
150
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
500
400
300
200
100
35
30
25
20
15
10
50
45
40
35
30
25
20
15
10
0
5
0
5
0
0
0
25
-di
-di
T
V
T
V
J
F
R
J
R
F
= 125°C
/dt, CURRENT RATE OF CHANGE(A/µs)
= 667V
= 125°C
/dt, CURRENT RATE OF CHANGE (A/µs)
= 677V
200
200
50
Case Temperature (°C)
400
400
75
60A
600
600
100
15A
30A
60A
800
800
125
APT30DQ100BCT(G)
30A
Duty cycle = 0.5
T
1000
1000
J
150
= 175°C
15A
1200
1200
175