ES2B Fairchild Semiconductor, ES2B Datasheet
ES2B
Manufacturer Part Number
ES2B
Description
DIODE FAST 2A 100V SMB
Manufacturer
Fairchild Semiconductor
Datasheet
1.ES2B.pdf
(3 pages)
Specifications of ES2B
Voltage - Forward (vf) (max) @ If
900mV @ 2A
Voltage - Dc Reverse (vr) (max)
100V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
10µA @ 100V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
20ns
Capacitance @ Vr, F
18pF @ 4V, 1MHz
Mounting Type
Surface Mount
Package / Case
DO-214AA, SMB
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
100 V
Forward Voltage Drop
0.9 V
Recovery Time
20 ns
Forward Continuous Current
2 A @ Ta=110C
Max Surge Current
50 A
Reverse Current Ir
10 uA
Power Dissipation
1.66 W
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
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Part Number
Manufacturer
Quantity
Price
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Part Number:
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Manufacturer:
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VISHAY
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30 000
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ES2BA
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Quantity:
20 000
2001 Fairchild Semiconductor Corporation
Fast Rectifiers
Absolute Maximum Ratings*
*
Thermal Characteristics
*
Electrical Characteristics
Symbol
Symbol
Symbol
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Device mounted on FR-4 PCB 0.013 mm.
V
t
I
C
P
R
R
rr
R
Features
•
•
•
•
•
•
V
I
I
T
T
F(AV)
FSM
F
T
D
stg
J
RRM
JA
JL
Glass passivated junction.
Low profile package.
Easy pick and place.
Superfast recovery times for
high efficiency.
Built-in strain relief.
For surface mount applications.
Forward Voltage @ 2.0 A
Reverse Recovery Time
Reverse Current @ rated V
Total Capacitance
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Surge Current
Storage Temperature Range
Operating Junction Temperature
Power Dissipation
Thermal Resistance, Junction to Ambient*
Thermal Resistance, Junction to Lead*
I
V
F
.375 " lead length @ T
8.3 ms Single Half-Sine-Wave
R
= 0.5 A, I
= 4.0 V, f = 1.0 MHz
R
= 1.0 A, I
Parameter
Parameter
Parameter
RR
A
= 0.25 A
R
= 110 C
ES2A - ES2D
T
A
= 25°C unless otherwise noted
T
A
T
= 25°C unless otherwise noted
T
A
A
= 25 C
= 100 C
2A
50
2A
COLOR BAND DENOTES CATHODE
SMB/DO-214AA
-55 to +150
-55 to +150
100
2B
2B
Device
Value
Value
0.90
1.66
350
2.0
50
75
20
20
10
18
150
2C
2C
200
2D
2D
Units
Units
Units
ES2A-ES2D, Rev. C
C/W
C/W
pF
ns
W
V
V
A
A
C
C
A
A
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ES2B Summary of contents
Page 1
... Device mounted on FR-4 PCB 0.013 mm. Electrical Characteristics Symbol Parameter V Forward Voltage @ 2 Reverse Recovery Time 0 1 Reverse Current @ rated Total Capacitance 4 1.0 MHz R 2001 Fairchild Semiconductor Corporation ES2A - ES2D SMB/DO-214AA COLOR BAND DENOTES CATHODE T = 25°C unless otherwise noted 110 25°C unless otherwise noted 0. 100 C A ...
Page 2
... OSCILLOSCOPE NONINDUCTIVE (Note 1) NOTES: 1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf. 2. Rise time = 10 ns max; Source impedance = 50 ohms. Reverse Recovery Time Characterstic and Test Circuit Diagram 2001 Fairchild Semiconductor Corporation 0.1 0.01 125 150 175 0.4 Figure 2. Forward Voltage Characteristics ...
Page 3
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...