APT75DQ100BG Microsemi Power Products Group, APT75DQ100BG Datasheet
APT75DQ100BG
Manufacturer Part Number
APT75DQ100BG
Description
DIODE ULT FAST 75A 1000V TO-247
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT75DQ100BG.pdf
(4 pages)
Specifications of APT75DQ100BG
Voltage - Forward (vf) (max) @ If
3V @ 75A
Voltage - Dc Reverse (vr) (max)
1000V (1kV)
Current - Average Rectified (io)
75A
Current - Reverse Leakage @ Vr
100µA @ 1000V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
250ns
Mounting Type
Through Hole, Radial
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Other names
APT75DQ100BGMI
APT75DQ100BGMI
APT75DQ100BGMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT75DQ100BG
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
PRODUCT APPLICATIONS
• Anti-Parallel Diode
• Free Wheeling Diode
• Snubber Diode
• PFC
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
Symbol
T
I
V
V
F(RMS)
I
J
E
I
F(AV)
I
,T
FSM
C
V
RWM
V
RRM
T
RM
AVL
-Switchmode Power Supply
-Inverters
-Motor Controllers
-Converters
-Inverters
R
F
T
STG
L
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, V
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Lead Temperature for 10 Sec.
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular TO-247 Package or
• Low Forward Voltage
• Low Leakage Current
• Avalanche Energy Rated
R
Surface Mount D
= 200V
APT Website - http://www.advancedpower.com
®
C
= 130°C, Duty Cycle = 0.5)
3
J
PAK Package
= 45°C, 8.3ms)
I
I
I
V
V
F
F
F
R
R
= 75A
= 150A
= 75A, T
= 1000V
= 1000V, T
J
= 125°C
PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
APT75DQ100B
APT75DQ100BG*
All Ratings: T
J
Density
= 125°C
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
1000V 75A
= 25°C unless otherwise specified.
APT75DQ100B(G)_S(G)
MIN
-55 to 175
APT75DQ100SG*
1000
1.93
APT75DQ100S
TYP
152
540
300
2.5
3.1
60
1
75
20
1 - Cathode
2 - Anode
2
(B)
Back of Case - Cathode
1
MAX
100
500
3.0
1
D
3
PAK
Amps
2
UNIT
UNIT
Volts
Volts
mJ
µA
pF
2
°C
(S)
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APT75DQ100BG Summary of contents
Page 1
... Characteristic / Test Conditions V Forward Voltage F I Maximum Reverse Leakage Current RM C Junction Capacitance APT75DQ100B APT75DQ100BG* ® PRODUCT BENEFITS • Low Losses • Low Noise Switching • Cooler Operation Surface Mount D PAK Package 3 • Higher Reliability Systems • Increased System Power Density All Ratings 130° ...
Page 2
Characteristic Symbol t Reverse Recovery Time rr t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Maximum Reverse Recovery Current RRM t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Maximum Reverse Recovery Current RRM t ...
Page 3
T = 175°C J 100 125° -55° 1.0 2.0 3 ANODE-TO-CATHODE VOLTAGE (V) F Figure 2. Forward Current vs. Forward Voltage 7000 T = 125°C ...
Page 4
I - Forward Conduction Current /dt - Rate of Diode Current Change Through Zero Crossing Maximum Reverse Recovery Current. RRM Reverse R ecovery Time, measured from ...