APT75DQ100BG Microsemi Power Products Group, APT75DQ100BG Datasheet - Page 3

• Manufacturer Part Number: APT75DQ100BG
• Description: DIODE ULT FAST 75A 1000V TO-247
• Manufacturer: Microsemi Power Products Group

Specifications of APT75DQ100BG

• Voltage - Forward (vf) (max) @ If: 3V @ 75A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 75A
• Current - Reverse Leakage @ Vr: 100µA @ 1000V
• Diode Type: Standard
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 250ns
• Mounting Type: Through Hole, Radial
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Other names: APT75DQ100BGMI; APT75DQ100BGMI

Figure 4. Reverse Recovery Charge vs. Current Rate of Change
Figure 6. Dynamic Parameters vs. Junction Temperature
7000
6000
5000
4000
3000
2000
1000
250
200
150
100
400
350
300
250
200
150
100
Figure 8. Junction Capacitance vs. Reverse Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
50
0
Figure 2. Forward Current vs. Forward Voltage
0
0
0
0
0
1
-di
T
V
I
V
RRM
J
R
F
F
T
= 125°C
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
, ANODE-TO-CATHODE VOLTAGE (V)
t
J
rr
200
, JUNCTION TEMPERATURE (°C)
T
25
J
V
150A
T
= 125°C
R
1.0
J
, REVERSE VOLTAGE (V)
= 175°C
400
50
Q
10
rr
600
2.0
75
800
100
T
J
37.5A
= -55°C
3.0
T
t
rr
J
1000
Q
125
= 25°C
100 200
rr
75A
1200
4.0
150
Figure 3. Reverse Recovery Time vs. Current Rate of Change
Figure 7. Maximum Average Forward Current vs. CaseTemperature
Figure 5. Reverse Recovery Current vs. Current Rate of Change
400
350
300
250
200
150
100
180
160
140
120
100
50
50
45
40
35
30
25
20
15
10
80
60
40
20
0
5
0
0
0
0
25
-di
-di
T
V
J
F
R
F
= 125°C
/dt, CURRENT RATE OF CHANGE(A/µs)
= 667V
/dt, CURRENT RATE OF CHANGE (A/µs)
200
200
50
Case Temperature (°C)
400
400
75
150A
37.5A
600
100
600
150A
75A
800
800
125
75A
Duty cycle = 0.5
T
1000
1000
J
T
V
150
J
R
= 175°C
= 125°C
= 667V
37.5A
1200
1200
175