EGP30F Fairchild Semiconductor, EGP30F Datasheet - Page 66
EGP30F
Manufacturer Part Number
EGP30F
Description
DIODE FAST GPP 3A 300V DO-201AD
Manufacturer
Fairchild Semiconductor
Specifications of EGP30F
Voltage - Forward (vf) (max) @ If
1.25V @ 3A
Voltage - Dc Reverse (vr) (max)
300V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 300V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP30F
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP30F
Manufacturer:
VISHAY/威世
Quantity:
20 000
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TO-220F (Continued)
IRFS644B
FQPF9N25
FQPF9N25C
IRFS634B
FQPF6N25
IRFS624B
FQPF4N25
IRFS614B
FQPF3N25
FQPF22N30
FQPF14N30
FQPF9N30
FQPF5N30
FQPF3N30
FQPF2N30
FQPF17N40
IRFS750A
FQPF11N40C
IRFS740B
FQPF7N40
FQPF6N40C
IRFS730B
FQPF5N40
IRFS720B
FQPF3N40
IRFS710B
FQPF2N40
FQPF18N50V2
FQPF13N50
FQPF13N50C
FQPF9N50
FQPF9N50C
IRFS840B
FQPF6N50
FQPF5N50C
Products
Min. (V)
BV
250
250
250
250
250
250
250
250
250
300
300
300
300
300
300
400
400
400
400
400
400
400
400
400
400
400
400
500
500
500
500
500
500
500
500
DSS
Config.
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
Single
0.265
10V
0.28
0.42
0.43
0.45
1.75
0.16
0.29
0.45
0.27
0.53
0.54
1.75
0.43
0.48
0.73
0.85
1.1
2.2
0.9
2.2
3.7
0.3
0.8
1.6
3.4
3.4
5.8
0.8
1.3
1.4
1
2
1
1
R
DS(ON)
4.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Max (Ω) @ V
2-61
2.5V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
GS
=
Bold = New Products (introduced January 2003 or later)
1.8V
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Discrete Power Products –
Q
@V
g
Typ. (nC)
15.5
26.5
13.5
16.5
101
GS
6.6
4.3
8.1
9.8
5.5
3.7
7.7
47
29
47
30
17
45
28
41
16
25
10
14
42
45
43
28
28
41
17
18
4
6
4
=5V
I
D
6.7
8.8
8.1
4.1
2.8
2.8
2.3
8.5
3.9
2.1
9.5
8.4
4.6
5.5
3.3
1.6
1.1
7.3
5.3
3.6
14
12
11
10
18
13
4
6
2
6
3
2
9
8
5
(A)
MOSFETs
P
D
43
45
38
38
37
34
32
22
27
56
50
42
35
20
40
56
49
44
44
42
38
38
35
33
20
23
16
69
56
48
50
44
44
42
38
(W)
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