EGP30K Fairchild Semiconductor, EGP30K Datasheet - Page 20
EGP30K
Manufacturer Part Number
EGP30K
Description
DIODE FAST GPP 3A 800V DO-201AD
Manufacturer
Fairchild Semiconductor
Specifications of EGP30K
Voltage - Forward (vf) (max) @ If
1.7V @ 3A
Voltage - Dc Reverse (vr) (max)
800V
Current - Average Rectified (io)
3A
Current - Reverse Leakage @ Vr
5µA @ 800V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
75ns
Mounting Type
Through Hole
Package / Case
DO-201AD, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
800 V
Forward Voltage Drop
1.7 V
Recovery Time
75 ns
Forward Continuous Current
3 A @ Ta=55C
Max Surge Current
125 A
Reverse Current Ir
5 uA
Power Dissipation
6.25 W
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP30K
Manufacturer:
VISHAY
Quantity:
150 000
Part Number:
EGP30K
Manufacturer:
VISHAY/威世
Quantity:
20 000
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SO-8
RF1K49090
RF1K49211
FDS6898A
FDS6898AZ
FDS6894A
FDS6894AZ
FDS6890A
FDS6892A
FDS6892AZ
FDS6812A
FDS9926A
FDS6574A
FDS6572A
FDS6570A
SI4466DY
NDS8426A
NDS8425
FDS8926A
RF1K49088
FDS6982
FDS6990A
FDS6912A
FDS8936A
FDS6912
HUF76113DK8
FDS6930A
NDS9936
HUF76105DK8
NDS9956A
FDS6961A
FDS6982S
FDS6984S
FDS6994S
FDS6986S
FDS6900S
SO-8 N-Channel
Products
Min. (V)
30 | 30
30 | 30
30 | 30
30 | 30
30 | 30
30 | 30
BV
12
12
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
30
30
30
30
30
30
30
30
30
30
30
30
DSS
(MOSFET & SyncFET)
(MOSFET & SyncFET)
(MOSFET & SyncFET)
(MOSFET & SyncFET)
(MOSFET & SyncFET)
Config.
Single
Single
Single
Single
Single
Single
Single
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
Dual
0.015 | 0.028
0.016 | 0.028
0.021 | 0.015
0.019 | 0.04
0.029 | 0.02
0.03 | 0.022
0.018
0.028
0.028
0.028
0.032
10V
0.04
0.05
0.08
0.09
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
R
DS(ON)
0.026 | 0.0175
0.022 | 0.035
0.028 | 0.055
0.038 | 0.028
0.037 | 0.029
0.02 | 0.035
2-15
0.0075
0.0075
0.0135
0.014
0.017
0.018
0.018
0.006
0.022
0.023
0.043
4.5V
0.014
0.017
0.018
0.022
0.006
0.035
0.042
0.055
0.078
0.03
0.03
0.04
0.11
0.14
Max (Ω) @ V
0.016@2.7V
0.028@2.7V
0.018
0.018
0.022
0.024
0.024
0.035
0.043
0.007
0.008
0.038
2.5V
GS
0.02
0.02
0.01
0.01
Replaced by NDS9925A
Replaced by FDS6930A
Replaced by FDS6930A
Bold = New Products (introduced January 2003 or later)
Replaced by NDS8425
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
=
Discrete Power Products –
0.009
1.8V
0.03
0.03
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Q
@V
g
17.5 | 8.5
18.5 | 8.5
6.5 | 11
Typ. (nC)
11 | 5
8 | 25
8 | 12
GS
19.8
6.2
5.8
8.4
5.3
9.5
2.1
16
16
17
14
23
12
12
12
75
57
47
47
43
11
12
19
7
5
= 5V
8.6 | 6.3
8.5 | 5.5
6.9 | 8.2
6.9 | 8.2
8.6 | 6.3
6.5 | 7.9
I
D
10.5
9.4
9.4
7.5
7.5
7.5
6.7
6.5
7.4
5.5
7.5
5.5
3.7
3.5
16
16
15
15
8
8
6
6
6
6
5
(A)
MOSFETs
P
D
2.5
2.5
2.5
2.5
2.5
2.5
1.6
1.6
2.5
2.5
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
2
(W)
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