RHRD660S9A_NL Fairchild Semiconductor, RHRD660S9A_NL Datasheet - Page 2

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RHRD660S9A_NL

Manufacturer Part Number
RHRD660S9A_NL
Description
DIODE HYPERFAST 600V 6A DPAK
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of RHRD660S9A_NL

Voltage - Forward (vf) (max) @ If
2.1V @ 6A
Voltage - Dc Reverse (vr) (max)
600V
Current - Average Rectified (io)
6A
Current - Reverse Leakage @ Vr
100µA @ 600V
Diode Type
Standard
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
35ns
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
©2002 Fairchild Semiconductor Corporation
Electrical Specifications
DEFINITIONS
Typical Performance Curves
R
Q
θ JC
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE
RR
pw = Pulse width.
V
C
I
t
t
t
D = Duty cycle.
R
F
rr
a
b
0.5
J
30
10
1
= Instantaneous forward voltage (pw = 300 µ s, D = 2%).
= Instantaneous reverse current.
= Reverse recovery time (See Figure 9), summation of t
= Time to reach peak reverse current (See Figure 9).
= Time from peak I
= Reverse recovery charge.
= Junction capacitance.
= Thermal resistance junction to case.
0
SYMBOL
R
Q
V
C
I
t
θ JC
t
t
RR
R
rr
a
b
F
J
175
0.5
o
C
V
100
F
RM
, FORWARD VOLTAGE (V)
1
o
to projected zero crossing of I
C
I
I
V
V
I
I
I
I
I
V
F
F
F
F
F
F
F
R
R
R
= 6A
= 6A, T
= 1A, dI
= 6A, dI
= 6A, dI
= 6A, dI
= 6A, dI
= 600V
= 600V, T
= 10V, I
25
T
TEST CONDITION
1.5
C
o
C
= 25
C
F
F
F
F
F
F
/dt = 200A/ µ s
/dt = 200A/ µ s
/dt = 200A/ µ s
/dt = 200A/ µ s
/dt = 200A/ µ s
= 150
= 0A
o
C
C, Unless Otherwise Specified
= 150
2
o
C
o
C
2.5
RM
a
based on a straight line from peak I
+ t
3
b
.
MIN
-
-
-
-
-
-
-
-
-
-
-
1000
0.01
100
0.1
10
1
0
FIGURE 2. REVERSE CURRENT vs REVERSE
TYP
8.5
16
45
20
-
-
-
-
-
-
-
100
RM
V
through 25% of I
R
200
, REVERSE VOLTAGE (V)
MAX
100
500
2.1
1.7
30
35
100
3
25
-
-
-
-
175
300
o
o
C
o
C
C
RM
(See Figure 9).
400
RHRD660, RHRD660S Rev. B
UNITS
o
500
C/W
µ A
µ A
nC
pF
ns
ns
ns
ns
V
V
600

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