APT45GP120BG Microsemi Power Products Group, APT45GP120BG Datasheet
APT45GP120BG
Manufacturer Part Number
APT45GP120BG
Description
IGBT 1200V 100A 625W TO247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT45GP120BG.pdf
(6 pages)
Specifications of APT45GP120BG
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 45A
Current - Collector (ic) (max)
100A
Power - Max
625W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT45GP120BGMI
APT45GP120BGMI
APT45GP120BGMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
The POWER MOS 7
Using Punch Through Technology this IGBT is ideal for many high frequency,
high voltage switching applications and has been optimized for high frequency
switchmode power supplies.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
Symbol
RBSOA
Symbol
T
V
V
BV
V
V
J
V
GE(TH)
CE(ON)
I
I
I
,T
I
I
GEM
P
GES
T
CES
CES
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT is a new generation of high voltage power IGBTs.
1
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
7
= V
= 1200V, V
= 1200V, V
@ T
GE
GE
• 100 kHz operation @ 800V, 16A
• 50 kHz operation @ 800V, 28A
• RBSOA rated
C
C
GE
GE
= 25°C
= 15V, I
= 15V, I
= 110°C
C
, I
= ±20V)
= 25°C
C
J
GE
= 1mA, T
= 150°C
GE
GE
®
C
C
= 0V, I
= 45A, T
= 45A, T
= 0V, T
= 0V, T
IGBT
j
C
= 25°C)
j
j
= 500µA)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
APT45GP120B
C
= 25°C unless otherwise specified.
1200
MIN
3
APT45GP120B
170A @ 960V
-55 to 150
G
TYP
4.5
3.3
3.0
1200
±20
±30
100
170
625
300
54
C
E
TO-247
2500
±100
MAX
500
3.9
6
G
1200V
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E
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APT45GP120BG Summary of contents
Page 1
POWER MOS 7 ® The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc RBSOA Safe ...
Page 3
TYPICAL PERFORMANCE CURVES 15V. 250µs PULSE TEST 80 <0.5 % DUTY CYCLE =25° =125° 0.5 1 1 COLLECTER-TO-EMITTER VOLTAGE ...
Page 4
TYPICAL PERFORMANCE CURVES 10V 600V 25°C or 125° 100 µ ...
Page 5
TYPICAL PERFORMANCE CURVES 10,000 5,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.25 0.20 0.9 0.15 0.7 0.5 0.10 0.3 0.05 0.1 0. ...
Page 6
APT30DF120 D.U.T. Figure 21, Inductive Switching Test Circuit 90 d(off) f 90% 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions APT’s products are covered by one or more of ...