APT45GP120BG Microsemi Power Products Group, APT45GP120BG Datasheet - Page 5

• Manufacturer Part Number: APT45GP120BG
• Description: IGBT 1200V 100A 625W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT45GP120BG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 45A
• Current - Collector (ic) (max): 100A
• Power - Max: 625W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT45GP120BGMI; APT45GP120BGMI

TYPICAL PERFORMANCE CURVES
Junction
temp. ( ”C)
10,000
5,000
1,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
0.25
0.20
0.15
0.10
0.05
500
100
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
50
10
V
(Watts)
0
Power
CE
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
10
Figure 19A, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
Case temperature
RC MODEL
0.9
0.7
0.5
0.3
0.1
0.05
20
0.0296
0.0870
0.0838
10
30
-4
SINGLE PULSE
40
RECTANGULAR PULSE DURATION (SECONDS)
0.00782
0.0150
0.185
C ies
C oes
C res
50
10
-3
10
180
160
140
120
100
170
100
Figure 20, Operating Frequency vs Collector Current
-2
80
60
40
20
Figure 18, Minimim Switching Safe Operating Area
50
10
0
5
1
10
0 100 200 300 400 500 600 700 800 900 1000
V
T
T
D = 50 %
V
R
J
C
CE
CE
G
= 125
= 75
= 5
20
= 800V
, COLLECTOR TO EMITTER VOLTAGE
I
C
°
F
f
f
P
°
C
, COLLECTOR CURRENT (A)
max1
max 2
C
max
diss
30
min(f
T
40
t
Note:
P
E
J
R
d (on )
diss
Peak T J = P DM x Z JC + T C
on 2
10
JC
T
Duty Factor D = t 1 / t
max1
C
-1
50
P
E
t
cond
0.05
r
, f
off
t 1
max 2
60
t
d(off )
t 2
)
70
t
f
2
80
APT45GP120B
1.0
90