APT15GT120BRDQ1G Microsemi Power Products Group, APT15GT120BRDQ1G Datasheet - Page 3

• Manufacturer Part Number: APT15GT120BRDQ1G
• Description: IGBT 1200V 36A 250W TO247
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT15GT120BRDQ1G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.6V @ 15V, 15A
• Current - Collector (ic) (max): 36A
• Power - Max: 250W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT15GT120BRDQ1GMI; APT15GT120BRDQ1GMI

FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
FIGURE 7, Threshold Voltage vs. Junction Temperature
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
45
40
35
30
25
20
15
10
45
40
35
30
25
20
15
10
5
0
5
0
6
5
4
3
2
1
0
-50 -25
FIGURE 1, Output Characteristics(T
V
0
0
9
CE
V
GE
TEST<0.5 % DUTY
V
V
I
T
, COLLECTER-TO-EMITTER VOLTAGE (V)
C
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
GE
= 15V
T
J
10
= 7.5A
T
J
= 125°C
1
2
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
J
, JUNCTION TEMPERATURE (°C)
T
, GATE-TO-EMITTER VOLTAGE (V)
= -55°C
J
= 25°C
0
11
2
4
I
T
T
C
T
J
25
J
= 30A
J
= 125°C
= -55°C
= 25°C
12
3
6
50
I
13
C
4
8
= 15A
75
<0.5 % DUTY CYCLE
250µs PULSE TEST
10
14
5
100 125 150
T
J
= 25°C.
J
12
15
6
= 25°C)
16
14
7
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
60
50
40
30
20
10
16
14
12
10
45
40
35
30
25
20
15
10
0
FIGURE 2, Output Characteristics (T
8
6
4
2
0
6
5
4
3
2
1
0
5
0
-50
-50
V
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
= 15A
-25
-25
V
20
5
GE
T
T
C
I
J
= 15V.
15V
C
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
V
FIGURE 4, Gate Charge
V
= 30A
0
CE
CE
0
GATE CHARGE (nC)
10
40
= 600V
= 240V
25
I
C
= 15A
25
15
60
50
50
75 100 125 150
I
20
80
C
= 7.5A
75
V
CE
100
14V
25
J
100
13V
12V
= 125°C)
=
11V
960V
10V
9V
8V
120
125
30