APT15GT120BRDQ1G Microsemi Power Products Group, APT15GT120BRDQ1G Datasheet - Page 4

IGBT 1200V 36A 250W TO247

APT15GT120BRDQ1G

Manufacturer Part Number
APT15GT120BRDQ1G
Description
IGBT 1200V 36A 250W TO247
Manufacturer
Microsemi Power Products Group
Series
Thunderbolt IGBT®r
Datasheet

Specifications of APT15GT120BRDQ1G

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.6V @ 15V, 15A
Current - Collector (ic) (max)
36A
Power - Max
250W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT15GT120BRDQ1GMI
APT15GT120BRDQ1GMI

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT15GT120BRDQ1G
Manufacturer:
IR
Quantity:
60 000
FIGURE 15, Switching Energy Losses vs. Gate Resistance
4000
3500
3000
2500
2000
1500
1000
8000
7000
6000
5000
4000
3000
2000
1000
FIGURE 13, Turn-On Energy Loss vs Collector Current
500
FIGURE 11, Current Rise Time vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
14
12
10
40
35
30
25
20
15
10
8
6
4
2
0
5
0
0
0
I
I
CE
CE
I
0
5
5
5
CE
V
V
R
V
V
T
V
T
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
R
, COLLECTOR TO EMITTER CURRENT (A)
J
CE
GE
G
CE
GE
J
CE
G
, COLLECTOR TO EMITTER CURRENT (A)
G
= 125°C
= 25°C
= 5Ω
E
= 5Ω
= 800V
= 800V
= +15V
= +15V
= 600V
=
on2,
R
10
10
10
5Ω, L
G
10
15A
, GATE RESISTANCE (OHMS)
,
E
T
T
on2,
J
J
=
=125°C
=
V
100
15
15
15
7.5A
T
GE
125°C
J
20
µ
=
H, V
= 15V
T
25 or 125°C,V
J
CE
=
20
20
20
25°C
=
800V
30
E
E
25
25
25
on2,
off,
GE
15A
30A
=
40
15V
30
30
30
E
E
off,
off,
7.5A
30A
35
35
35
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
1000
4000
3500
3000
2500
2000
1500
1000
120
100
FIGURE 10, Turn-Off Delay Time vs Collector Current
800
600
400
200
500
FIGURE 12, Current Fall Time vs Collector Current
80
60
40
20
45
40
35
30
25
20
15
10
0
5
0
0
0
I
I
CE
CE
I
0
5
5
5
CE
R
V
V
R
V
V
R
V
R
L = 100 µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
CE
GE
G
G
CE
, COLLECTOR TO EMITTER CURRENT (A)
G
V
T
= 5Ω
= 5Ω
=
=
GE
= 800V
= 800V
T
= +15V
= +15V
J
=
J
5Ω
5Ω, L
=
10
10
10
800V
, JUNCTION TEMPERATURE (°C)
=15V,T
25
25°C, V
=
T
J
100
J
=125°C
15
15
15
GE
=
µ
125°C
50
H, V
=
E
E
E
15V
T
on2,
on2,
on2,
J
CE
20
20
20
=
7.5A
=
30A
15A
25°C
T
V
800V
J
75
GE
=
E
125°C, V
off,
25
25
25
=15V,T
7.5A
100
J
=25°C
GE
30
30
30
E
E
off,
off,
=
30A
15V
15A
125
35
35
35

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