APT25GP120BG Microsemi Power Products Group, APT25GP120BG Datasheet
APT25GP120BG
Manufacturer Part Number
APT25GP120BG
Description
IGBT 1200V 69A 417W TO247
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT25GP120BG.pdf
(6 pages)
Specifications of APT25GP120BG
Igbt Type
PT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.9V @ 15V, 25A
Current - Collector (ic) (max)
69A
Power - Max
417W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT25GP120BGMI
APT25GP120BGMI
APT25GP120BGMI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT25GP120BG
Manufacturer:
Microsemi Power Products Group
Quantity:
135
A new generation of high voltage power IGBTs. Using punch-through
technology and a proprietary metal gate, this IGBT has been optimized for
very fast switching, making it ideal for high frequency, high voltage switch-
mode power supplies and tail current sensitive applications. In many cases,
the POWER MOS 7
MOSFET.
• Low Conduction Loss
• Low Gate Charge
• Ultrafast Tail Current shutoff
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
Symbol
RBSOA
T
Symbol
V
V
BV
V
V
J
GE(TH)
CE(ON)
I
V
I
I
,T
I
I
P
GEM
CES
GES
CES
T
CM
C1
C2
GE
CES
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Gate-Emitter Voltage Transient
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Reverse Bias Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage (V
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
POWER MOS 7
®
IGBT provides a lower cost alternative to a Power
1
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= V
= 1200V, V
= 1200V, V
GE
GE
• 50 kHz operation @ 800V, 19A
• RBSOA Rated
• 100 kHz operation @ 800V,11A
C
C
C
GE
GE
= 25°C
= 15V, I
= 15V, I
= 25°C
= 110°C
, I
= ±20V)
C
J
= 1mA, T
= 150°C
GE
GE
GE
®
C
C
= 0V, I
= 25A, T
= 25A, T
= 0V, T
= 0V, T
IGBT
j
C
= 25°C)
j
= 250µA)
j
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
APT25GP120B
C
= 25°C unless otherwise specified.
1200
MIN
3
APT25GP120B
90A @ 960V
-55 to 150
G
TYP
4.5
3.3
3.0
1200
±20
±30
C
417
300
69
33
90
E
TO-247
±100
2500
MAX
250
3.9
6
G
1200V
Amps
Watts
UNIT
UNIT
Volts
Volts
µA
nA
°C
C
E
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APT25GP120BG Summary of contents
Page 1
POWER MOS 7 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C IInput Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc RBSOA Reverse ...
Page 3
TYPICAL PERFORMANCE CURVES 15V. 250µs PULSE TEST <0.5 % DUTY CYCLE =125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(V 100 250µs ...
Page 4
V = 10V 15V 600V 25°C, T =125° 100 µ ...
Page 5
TYPICAL PERFORMANCE CURVES 10,000 5,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.35 0.30 0.9 0.25 0.7 0.20 0.5 0.15 0.3 0.10 0.05 0.1 0. ...
Page 6
APT15DF120 D.U.T. Figure 21, Inductive Switching Test Circuit 90 d(off) f 90% 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions APT’s products are covered by one or more of ...