APT25GP120BG Microsemi Power Products Group, APT25GP120BG Datasheet - Page 5

• Manufacturer Part Number: APT25GP120BG
• Description: IGBT 1200V 69A 417W TO247
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT25GP120BG

• Igbt Type: PT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.9V @ 15V, 25A
• Current - Collector (ic) (max): 69A
• Power - Max: 417W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GP120BGMI; APT25GP120BGMI

TYPICAL PERFORMANCE CURVES
Case temperature(°C)
FIGURE 19B, TRANSIENT THERMAL IMPEDANCE MODEL
10,000
Figure 17, Capacitance vs Collector-To-Emitter Voltage
5,000
1,000
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
Junction
temp (°C)
V
10
CE
0
0
10
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
(watts)
Power
-5
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
0.05
0.9
0.7
0.5
0.3
0.1
20
RC MODEL
0.128
0.173
10
-4
30
40
SINGLE PULSE
C oes
C ies
C res
RECTANGULAR PULSE DURATION (SECONDS)
0.00833F
0.171F
50
10
-3
182
100
50
10
5
Figure 20, Operating Frequency vs Collector
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
10
10
= 5
= 800V
100
-2
Figure 18, Minimim Switching Safe Operating Area
90
80
70
60
50
40
20
I
°
°
C
C
0
C
15
, COLLECTOR CURRENT (A)
0
V
CE
20
, COLLECTOR TO EMITTER VOLTAGE
200
25
Current
Note:
30
Peak T J = P DM x Z JC + T C
400
Duty Factor D = t 1 / t
10
35
-1
t 1
40
600
t 2
45 50
800
2
F
f
f
P
max1
max 2
max
diss
APT25GP120B
1000
1.0
min(f
T
t
E
P
J
R
d (on )
diss
on 2
JC
T
max1
C
P
E
t
cond
0.05
r
, f
off
max 2
t
d(off )
)
t
f