APT20GF120KRG Microsemi Power Products Group, APT20GF120KRG Datasheet
APT20GF120KRG
Manufacturer Part Number
APT20GF120KRG
Description
IGBT 1200V 32A 200W TO220
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT20GF120KRG.pdf
(5 pages)
Specifications of APT20GF120KRG
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 15A
Current - Collector (ic) (max)
32A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
APT20GF120KR
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch Through Technology the Fast IGBT offers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
MAXIMUM RATINGS
USA
EUROPE
STATIC ELECTRICAL CHARACTERISTICS
V
V
Symbol
Symbol
T
BV
CE
V
GE
V
J
I
I
V
E
I
,T
I
I
I
P
CES
GES
CGR
CES
T
CM
LM
C1
C2
GE
(ON)
AS
CES
(TH)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Parameter
Collector-Emitter Voltage
Collector-Gate Voltage (R
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
RBSOA Clamped Inductive Load Current @ R
Single Pulse Avalanche Energy
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
405 S.W. Columbia Street
Chemin de Magret
1
(V
GE
CE
CE
CE
APT Website - http://www.advancedpower.com
@ T
= 20K )
• High Freq. Switching to 20KHz
= V
= V
= V
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
Bend, Oregon 97702 -1035
F-33700 Merignac - France
2
GE
GE
C
C
C
GE
CES
CES
GE
= 25°C
= 15V, I
= 15V, I
= 25°C
= 90°C
= ±20V, V
, I
, V
, V
C
GE
GE
GE
= 350µA, T
C
C
= 0V, I
= 0V, T
= 0V, T
= 15A, T
= 15A, T
g
CE
= 11 T
= 0V)
C
j
j
j
= 0.8mA)
= 25°C)
= 125°C)
= 25°C)
j
j
= 25°C)
= 125°C)
C
All Ratings: T
= 125°C
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
APT20GF120KR
C
= 25°C unless otherwise specified.
1200
MIN
4.5
APT20GF120KR
-55 to 150
1200V
G
C
1200
1200
±20
200
300
TYP
E
5.5
2.7
3.3
32
20
64
40
22
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
TO-220
±100
MAX
G
6.5
3.2
3.9
0.8
5.0
32A
Amps
Watts
UNIT
UNIT
Volts
Volts
mA
mJ
nA
°C
C
E
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APT20GF120KRG Summary of contents
Page 1
APT20GF120KR The Fast IGBT is a new generation of high voltage power IGBTs. Using Non-Punch Through Technology the Fast IGBT offers superior ruggedness, fast switching speed and low Collector-Emitter On voltage. • Low Forward Voltage Drop • Low Tail Current ...
Page 2
DYNAMIC CHARACTERISTICS Symbol Characteristic C Input Capacitance ies Output Capacitance C oes C Reverse Transfer Capacitance res 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Gate-Collector ("Miller") Charge (on) Turn-on Delay Time d t Rise ...
Page 3
APT20GF120KR 50 V =17 & 15V COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 1, Typical Output Characteristics (T 60 250µSec. Pulse Test V = 15V =-55°C C ...
Page 4
1.5 1.0 -50 - JUNCTION TEMPERATURE (°C) J Figure 8, Typical V (SAT) Voltage vs Junction Temperature CE 1.2 1.1 1 0.9 0.8 0.7 ...
Page 5
APT20GF120KR A 10% B ( (off) V (on 90% 10% V (on (off) GE (on ...