APT20GF120KRG Microsemi Power Products Group, APT20GF120KRG Datasheet - Page 4

• Manufacturer Part Number: APT20GF120KRG
• Description: IGBT 1200V 32A 200W TO220
• Manufacturer: Microsemi Power Products Group

Specifications of APT20GF120KRG

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 32A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 12, Typical Switching Energy Losses vs. Junction Temperature
Figure 8, Typical V
Figure 10, Breakdown Voltage vs Junction Temperature
100
5.0
4.0
2.0
1.5
1.0
1.2
1.1
0.9
0.8
0.7
0.1
10
10
1
1
1
-50 -25
-50
-50 -25
0.1
V
CC
V
T
-25
T
R
T
GE
= 0.66 V
J
J
G
J
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
, JUNCTION TEMPERATURE (°C)
= 10
= +15V
CE
0
0
0
CES
(SAT) Voltage vs Junction Temperature
25
25
25
0.5 I
0.5 I
50
50
50
I
I
I
I
C1
C2
C1
C2
C2
C2
75
75
75
1.0
100 125 150
100 125 150
100 125 150
Figure 14,Typical Load Current vs Frequency
F, FREQUENCY (KHz)
10
Figure 13, Typical Switching Energy Losses vs Collector Current
Figure 11, Typical Switching Energy Losses vs Gate Resistance
Figure 9, Maximum Collector Current vs Case Temperature
5.0
4.0
3.0
2.0
1.0
1.6
1.2
0.8
0.4
40
30
20
10
0
0
0
25
0
0
V
V
I
C
CC
CC
T
V
V
, COLLECTOR CURRENT (AMPERES)
T
R
J
GE
GE
J
I
= 0.66 V
= 0.66 V
C
R
G
= +125°C
= +25°C
T
= +15V
= I
G
= +15V
= 10
20
C
50
4
, GATE RESISTANCE (OHMS)
, CASE TEMPERATURE (°C)
C2
CES
CES
100
40
75
8
E
E
I
off
on
LOAD
Power dissapation = 56W
Gate drive as specified
100
E
60
E
12
Duty Cycle = 50%
off
= I
on
T
T
sink
RMS
J
For Both:
= +125°C
= +90°C
of fundamental
125
80
16
APT20GF120KR
1000
150
100
20