APT15GN120KG Microsemi Power Products Group, APT15GN120KG Datasheet

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APT15GN120KG

Manufacturer Part Number
APT15GN120KG
Description
IGBT 1200V 45A 195W TO220
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet
1.APT15GN120KG.pdf (6 pages)

Specifications of APT15GN120KG

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.1V @ 15V, 15A
Current - Collector (ic) (max)
45A
Power - Max
195W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-220
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL PERFORMANCE CURVES
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra
low V
conduction loss. Easy paralleling is a result of very tight parameter distribution and a
slightly positive V
design and minimizes losses.
•
• Trench Gate: Low V
• Easy Paralleling
Applications: Welding, Inductive Heating, Solar Inverters, SMPS, Motor drives, UPS
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
1200V Field Stop
SSOA
(BR)CES
R
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
GINT
CES
CM
C1
C2
GE
CE(ON)
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
and are ideal for low frequency applications that require absolute minimum
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
Intergrated Gate Resistor
CE(ON)
CE(on)
temperature coefficient. Low gate charge simplifies gate drive
1
(V
CE
CE
CE
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
®
GE
GE
C
C
GE
GE
J
= 25°C
= 110°C
= 15V, I
= 15V, I
= 150°C
= ±20V)
, I
C
GE
= 600µA, T
GE
GE
C
C
= 0V, I
= 15A, T
= 15A, T
= 0V, T
= 0V, T
C
j
= 0.5mA)
j
j
= 25°C)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
All Ratings: T
2
2
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
C
= 25°C unless otherwise specified.
1200
MIN
5.0
1.4
APT15GN120K(G)
45A @ 1200V
-55 to 150
APT15GN120K
APT15GN120KG*
1200
TYP
±30
195
300
N/A
5.8
1.7
2.0
45
22
45
APT15GN120K(G)
G
1200V
MAX
TBD
100
120
6.5
2.1
TO-220
C
E
Amps
Watts
UNIT
Units
Volts
Volts
°C
µA
nA
Ω

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APT15GN120KG Summary of contents

Page 1

... 25° 1200V 0V 125° ±20V) GE APT Website - http://www.advancedpower.com 1200V APT15GN120K(G) APT15GN120K APT15GN120KG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. TO-220 G = 25°C unless otherwise specified. C APT15GN120K(G) 1200 ± 45A @ 1200V 195 -55 to 150 300 MIN TYP MAX 1200 5 ...

Page 2

Characteristic Symbol C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP Q 3 Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc SSOA Switching Safe Operating ...

Page 3

V = 15V 125° 25° -55° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T J ...

Page 4

V = 15V 800V 25°C T =125° 4.3Ω 100 µ COLLECTOR ...

Page 5

TYPICAL PERFORMANCE CURVES 2,000 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.70 0. 0.9 0.50 0.7 0.40 0.5 0.30 0.3 0.20 0.10 0.1 0.05 ...

Page 6

APT15DQ120 90% Gate Voltage t d(off) 90% Collector Voltage t f 10% 0 Collector Current Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions 10% t d(on Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T ...

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