APT15GN120KG Microsemi Power Products Group, APT15GN120KG Datasheet - Page 3

• Manufacturer Part Number: APT15GN120KG
• Description: IGBT 1200V 45A 195W TO220
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT15GN120KG

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 15A
• Current - Collector (ic) (max): 45A
• Power - Max: 195W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FIGURE 7, Breakdown Voltage vs. Junction Temperature
FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
1.05
1.00
0.95
0.90
3.5
3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0
-50
FIGURE 1, Output Characteristics(T
V
0
0
8
CE
V
GE
V
TEST<0.5 % DUTY
V
, COLLECTER-TO-EMITTER VOLTAGE (V)
GE
FIGURE 3, Transfer Characteristics
GE
250µs PULSE
T
= 15V
-25
J
, GATE-TO-EMITTER VOLTAGE (V)
CYCLE
, GATE-TO-EMITTER VOLTAGE (V)
, JUNCTION TEMPERATURE (°C)
1
T
4
J
T
10
I
T
= 125°C
C
J
J
0
= -55°C
= 30A
= 25°C
I
C
2
= 15A
8
25
T
12
3
J
= -55°C
I
50
C
T
12
J
= 7.5A
= 25°C
<0.5 % DUTY CYCLE
250µs PULSE TEST
4
75
T
14
T
J
= 25°C.
J
16
= 125°C
5
J
100 125
= 25°C)
16
20
6
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
3.0
2.5
2.0
1.5
1.0
0.5
60
50
40
30
20
10
16
14
12
10
60
50
40
30
20
10
FIGURE 2, Output Characteristics (T
0
8
6
4
2
0
0
0
-50
V
-50
0
0
CE
T
<0.5 % DUTY CYCLE
I
250µs PULSE TEST
C
J
, COLLECTER-TO-EMITTER VOLTAGE (V)
= 25°C
I
= 15A
C
-25
-25
= 30A
V
T
GE
T
20
C
J
2
= 15V.
, Junction Temperature (°C)
, CASE TEMPERATURE (°C)
V
FIGURE 4, Gate Charge
0
CE
V
0
GATE CHARGE (nC)
CE
I
C
= 600V
= 15A
25
= 240V
40
4
15V
25
50
13V
50
12V
60
6
75 100 125 150
11V
I
C
10V
75
= 7.5A
V
9V
CE
80
8
8V
J
100
7V
=960V
= 125°C)
100
125
10