APT20GF120BRDQ1G Microsemi Power Products Group, APT20GF120BRDQ1G Datasheet - Page 2

• Manufacturer Part Number: APT20GF120BRDQ1G
• Description: IGBT 1200V 36A 200W TO247
• Manufacturer: Microsemi Power Products Group

Specifications of APT20GF120BRDQ1G

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 36A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

THERMAL AND MECHANICAL CHARACTERISTICS
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
Symbol
Symbol
SSOA
adding to the IGBT turn-on loss. (See Figure 24.)
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
V
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
JC
JC
g
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
6
4
4
4
55
5
T
15V, L = 100µH,V
Inductive Switching (125°C)
Inductive Switching (25°C)
J
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
V
V
T
V
V
V
R
R
f = 1 MHz
J
CC
CC
CE
I
I
I
J
GE
GE
GE
G
G
C
C
C
= +125°C
= +25°C
= 15A
= 15A
= 4.3Ω
= 15A
= 4.3Ω
= 600V
= 800V
= 800V
G
= 15V
= 15V
= 15V
= 4.3Ω, V
CE
CE
= 25V
= 1200V
GE
=
MIN
MIN
64
1090
1480
1058
10.5
TYP
125
100
120
895
850
840
145
110
865
TYP
5.9
65
12
65
10
95
10
9
9
MAX
MAX
1.18
.63
UNIT
UNIT
°C/W
nC
pF
µ
µ
gm
ns
ns
V
A
J
J