APT20GF120BRDQ1G Microsemi Power Products Group, APT20GF120BRDQ1G Datasheet - Page 4
![IGBT 1200V 36A 200W TO247](/photos/5/32/53213/to-247_sml.jpg)
APT20GF120BRDQ1G
Manufacturer Part Number
APT20GF120BRDQ1G
Description
IGBT 1200V 36A 200W TO247
Manufacturer
Microsemi Power Products Group
Datasheet
1.APT20GF120BRDQ1G.pdf
(9 pages)
Specifications of APT20GF120BRDQ1G
Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.2V @ 15V, 15A
Current - Collector (ic) (max)
36A
Power - Max
200W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
I
I
CE
CE
I
CE
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C
= 4.3Ω
=
= 800V
T
R
4.3Ω, L
J
G
=
, GATE RESISTANCE (OHMS)
,
25 or 125°C,V
or 125°C
=
100
µ
H, V
V
GE
CE
GE
=
=
= 15V
15V
800V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
I
CE
CE
I
CE
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
V
=
T
=
GE
J
4.3Ω
, JUNCTION TEMPERATURE (°C)
800V
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C