APT25GN120B2DQ2G Microsemi Power Products Group, APT25GN120B2DQ2G Datasheet - Page 2

• Manufacturer Part Number: APT25GN120B2DQ2G
• Description: IGBT 1200V 67A 272W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT25GN120B2DQ2G

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 25A
• Current - Collector (ic) (max): 67A
• Power - Max: 272W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GN120B2DQ2GMI; APT25GN120B2DQ2GMI

1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol
SCSOA
Symbol
SSOA
adding to the IGBT turn-on loss. (See Figure 24.)
loss. (See Figures 21, 22.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
V
t
t
t
t
R
R
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
on1
on2
off
Q
G
GEP
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
g
JC
JC
is external gate resistance, not including R
T
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller ") Charge
Switching Safe Operating Area
Short Circuit Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
4
4
66
4
Gint
nor gate driver impedance. (MIC4452)
55
5
T
15V, L = 100µH,V
Inductive Switching (125°C)
J
Inductive Switching (25°C)
= 150°C, R
T
V
V
J
CC
= 125°C, R
GE
Test Conditions
= 960V, V
Capacitance
Gate Charge
= 0V, V
T
V
V
R
V
R
T
V
V
V
f = 1 MHz
J
CC
CC
CE
I
I
G
I
G
J
GE
GE
GE
C
C
C
= +125°C
= +25°C
= 4.3Ω
= 4.3Ω
= 25A
= 25A
= 25A
G
= 600V
= 800V
= 800V
= 15V
= 15V
= 15V
= 4.3Ω
CE
G
GE
CE
= 4.3Ω
= 25V
7
7
= 15V,
= 1200V
7
, V
7
GE
=
MIN
MIN
75
10
1800
1490
2150
2390
3075
TBD
TBD
TYP
105
155
280
135
335
225
9.5
TYP
85
10
85
22
17
22
17
5.9
MAX
MAX
.46
.67
UNIT
UNIT
°C/W
nC
pF
µ
µ
µ
gm
ns
ns
V
A
s
J
J