APT25GN120B2DQ2G Microsemi Power Products Group, APT25GN120B2DQ2G Datasheet - Page 5

• Manufacturer Part Number: APT25GN120B2DQ2G
• Description: IGBT 1200V 67A 272W TMAX
• Manufacturer: Microsemi Power Products Group

Specifications of APT25GN120B2DQ2G

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.1V @ 15V, 25A
• Current - Collector (ic) (max): 67A
• Power - Max: 272W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: T-MAX
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT25GN120B2DQ2GMI; APT25GN120B2DQ2GMI

Case temperature. (°C)
TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Figure 17, Capacitance vs Collector-To-Emitter Voltage
4,000
1,000
0.50
0.40
0.30
0.20
0.10
500
100
Junction
temp. (°C)
V
50
10
CE
0
10
(watts)
0
Power
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
10
0.05
0.9
0.7
0.5
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
0.231
0.230
10
30
-4
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
ies
oes
res
0.00403F
0.132F
SINGLE PULSE
50
10
-3
140
100
Figure 20, Operating Frequency vs Collector Current
50
10
5
T
T
D = 50 %
V
R
J
C
CE
G
10
= 125
= 75
= 4.3Ω
= 800V
10
Figure 18,Minimim Switching Safe Operating Area
-2
80
70
60
50
40
30
20
10
0
°
°
I
C
C
C
0
V
, COLLECTOR CURRENT (A)
15
CE
200
, COLLECTOR TO EMITTER VOLTAGE
20
400
25
Note:
Peak T J = P DM x Z θJC + T C
600
30
10
Duty Factor D =
-1
800
35
t 1
APT25GN120B2DQ2(G)
t 2
40
1000 1200 1400
t 1
45
/
t 2
F
f
f
P
max1
max2
max
diss
1.0
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f