APT50GF120LRG Microsemi Power Products Group, APT50GF120LRG Datasheet

IGBT 1200V 156A 781W TO264

APT50GF120LRG

Manufacturer Part Number
APT50GF120LRG
Description
IGBT 1200V 156A 781W TO264
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT50GF120LRG

Igbt Type
NPT
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3V @ 15V, 75A
Current - Collector (ic) (max)
156A
Power - Max
781W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APT50GF120LRGMI
APT50GF120LRGMI
The Fast IGBT is a new generation of high voltage power IGBTs. Using
Non-Punch through technology, the Fast IGBToffers superior ruggedness,
fast switching speed and low Collector-Emitter On voltage.
• Low Forward Voltage Drop
• RBSOA and SCSOA Rated
TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
V
Symbol
Symbol
T
V
V
SSOA
(BR)CES
V
J
CE(ON)
GE(TH)
I
I
V
I
,T
I
I
GES
P
CES
T
CES
CM
C1
C2
GE
D
L
STG
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Continuous Collector Current @ T
Pulsed Collector Current
Switching Safe Operating Area @ T
Total Power Dissipation
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
Gate Threshold Voltage
Collector-Emitter On Voltage (V
Collector-Emitter On Voltage (V
Collector Cut-off Current (V
Collector Cut-off Current (V
Gate-Emitter Leakage Current (V
FAST IGBT
1
(V
• High Freq. Switching to 20KHz
• Ultra Low Leakage Current
CE
CE
CE
7
= V
= 1200V, V
= 1200V, V
APT Website - http://www.advancedpower.com
@ T
®
GE
GE
C
GE
GE
J
= 100°C
= 15V, I
= 15V, I
C
= 150°C
= ±20V)
, I
= 25°C
C
GE
= 700µA, T
GE
GE
C
C
= 0V, I
= 75A, T
= 75A, T
= 0V, T
= 0V, T
C
APT50GF120B2R
APT50GF120B2RG* APT50GF120LRG*
j
= 750µA)
j
j
= 25°C)
= 25°C)
= 125°C)
j
j
= 25°C)
= 125°C)
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
All Ratings: T
2
2
C
= 25°C unless otherwise specified.
APT50GF120B2_LR(G)
1200
1200V
MIN
4.5
225A @ 1200V
-55 to 150
APT50GF120LR
APT50GF120B2_LR(G)
1200
±30
156
225
781
300
TYP
85
5.5
2.5
3.1
(B2)
T-Max
G
MAX
±100
0.75
®
6.5
3.0
5.5
TO-264
C
E
Amps
Watts
UNIT
Units
Volts
Volts
mA
°C
nA
(L)

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APT50GF120LRG Summary of contents

Page 1

... Collector Cut-off Current (V I Gate-Emitter Leakage Current (V GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. APT50GF120B2R APT50GF120B2RG* APT50GF120LRG* ® *G Denotes RoHS Compliant, Pb Free Terminal Finish. • High Freq. Switching to 20KHz • Ultra Low Leakage Current All Ratings: T ...

Page 2

Symbol Characteristic C Input Capacitance ies C Output Capacitance oes C Reverse Transfer Capacitance res V Gate-to-Emitter Plateau Voltage GEP 3 Q Total Gate Charge g Q Gate-Emitter Charge ge Q Gate-Collector ("Miller ") Charge gc Switching Safe Operating Area ...

Page 3

V = 15V -55°C J 140 120 T = 25°C J 100 125° COLLECTER-TO-EMITTER VOLTAGE (V) CE FIGURE 1, Output Characteristics(T ...

Page 4

V = 15V 800V 25°C or 125° 1.0Ω 100µ COLLECTOR TO EMITTER CURRENT (A) CE FIGURE 9, Turn-On Delay Time vs Collector Current = = = ...

Page 5

TYPICAL PERFORMANCE CURVES 1,000 500 100 COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) CE Figure 17, Capacitance vs Collector-To-Emitter Voltage 0.18 0. 0.9 0.14 0.12 0.7 0.10 0.5 0.08 0.06 0.3 0.04 0.1 0.02 ...

Page 6

APT60DQ120 90% t d(off) 90 10% Switching Energy Figure 23, Turn-off Switching Waveforms and Definitions t d(on) Switching Energy Figure 22, Turn-on Switching Waveforms and Definitions T = 125° APT50GF120B2_LR(G) 10 90% 5% 10% ...

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