APT50GF120LRG Microsemi Power Products Group, APT50GF120LRG Datasheet - Page 4

• Manufacturer Part Number: APT50GF120LRG
• Description: IGBT 1200V 156A 781W TO264
• Manufacturer: Microsemi Power Products Group

Specifications of APT50GF120LRG

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 75A
• Current - Collector (ic) (max): 156A
• Power - Max: 781W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-264
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: APT50GF120LRGMI; APT50GF120LRGMI

FIGURE 15, Switching Energy Losses vs. Gate Resistance
FIGURE 13, Turn-On Energy Loss vs Collector Current
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
I
I
CE
CE
I
CE
R
V
T
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
J
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
G
= 25°C or 125°C
= 1.0Ω
=
T
= 800V
R
J
1.0Ω, L
=
G
V
, GATE RESISTANCE (OHMS)
GE
25 or 125°C,V
= 15V
=
100
µ
H, V
GE
CE
=
=
15V
800V
FIGURE 16, Switching Energy Losses vs Junction Temperature
FIGURE 14, Turn Off Energy Loss vs Collector Current
FIGURE 10, Turn-Off Delay Time vs Collector Current
FIGURE 12, Current Fall Time vs Collector Current
I
I
CE
CE
I
CE
V
R
L = 100µH
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
G
V
=
T
GE
=
J
1.0Ω
, JUNCTION TEMPERATURE (°C)
800V
=15V,T
J
=125°C
V
GE
=15V,T
J
=25°C