PMBFJ310,215 NXP Semiconductors, PMBFJ310,215 Datasheet - Page 14

• Manufacturer Part Number: PMBFJ310,215
• Description: JFET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ310,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2083-2; 934009000215; PMBFJ310 T/R

Philips Semiconductors
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
9
10
11
12
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 3
Dynamic characteristics . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
PMBFJ308; PMBFJ309; PMBFJ310
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Published in The Netherlands
N-channel silicon field-effect transistors
Document order number: 9397 750 13403
Date of release: 23 July 2004