PMBFJ310,215 NXP Semiconductors, PMBFJ310,215 Datasheet - Page 3

JFET N-CHAN 25V SOT-23

PMBFJ310,215

Manufacturer Part Number
PMBFJ310,215
Description
JFET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBFJ310,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
24mA @ 10V
Drain To Source Voltage (vdss)
25V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
2V @ 1µA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Resistance - Rds(on)
50 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
- 25 V
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 25 V
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2083-2
934009000215
PMBFJ310 T/R
Philips Semiconductors
6. Thermal characteristics
Table 6:
[1]
7. Static characteristics
Table 7:
T
9397 750 13403
Product data sheet
Symbol
R
Symbol
V
V
V
j
(BR)GSS
GSoff
GSS
th(j-a)
= 25 C; unless otherwise specified.
Device mounted on an FR4 printed-circuit board.
Thermal characteristics
Static characteristics
Parameter
gate-source breakdown voltage
gate-source cut-off voltage
gate-source forward voltage
Parameter
thermal resistance from junction to ambient
PMBFJ308
PMBFJ309
PMBFJ310
Table 5:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
T
T
Fig 1. Power derating curve.
stg
j
tot
Limiting values
Parameter
total power dissipation
storage temperature
junction temperature
PMBFJ308; PMBFJ309; PMBFJ310
(mW)
P
Conditions
I
I
I
I
I
G
D
D
D
G
tot
400
300
200
100
Rev. 03 — 23 July 2004
= 1 A; V
= 1 A; V
= 1 A; V
= 1 A; V
= 1 mA; V
0
…continued
0
Conditions
DS
DS
DS
DS
DS
50
= 10 V
= 10 V
= 10 V
= 0 V
= 0 V
Conditions
up to T
100
N-channel silicon field-effect transistors
amb
150
= 25 C
T
amb
mbb688
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
( C)
[1]
200
Min
-
25
1
1
2
Typ
500
Typ
-
-
-
-
-
Min
-
-
65
Max Unit
-
1
Max
250
+150
150
6.5 V
4
6.5 V
Unit
K/W
V
V
V
V
Unit
mW
C
C
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