PMBFJ310,215 NXP Semiconductors, PMBFJ310,215 Datasheet - Page 8

• Manufacturer Part Number: PMBFJ310,215
• Description: JFET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ310,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2083-2; 934009000215; PMBFJ310 T/R

Philips Semiconductors
9397 750 13403
Product data sheet
Fig 14. Drain current as a function of gate-source voltage; typical values.
Fig 15. Gate current as a function of drain-gate voltage; typical values.
(1) I
(2) I
(3) I
(4) I
V
T
D
D
D
GSS
j
DS
= 25 C.
= 10 mA.
= 1 mA.
= 100 A.
.
= 10 V; T
I
( A)
(pA)
GSS
I
10
10
10
10
D
j
10
10
10
10
10
= 25 C.
10
10
1
1
3
2
1
2
3
4
3
2
1
2.5
0
2.0
PMBFJ308; PMBFJ309; PMBFJ310
4
Rev. 03 — 23 July 2004
1.5
8
1.0
N-channel silicon field-effect transistors
12
(1)
(2)
(3)
(4)
0.5
V
DG
V
GS
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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