PMBFJ310,215 NXP Semiconductors, PMBFJ310,215 Datasheet - Page 4

• Manufacturer Part Number: PMBFJ310,215
• Description: JFET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ310,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 24mA @ 10V
• Drain To Source Voltage (vdss): 25V
• Fet Type: N-Channel
• Voltage - Breakdown (v(br)gss): 25V
• Voltage - Cutoff (vgs Off) @ Id: 2V @ 1µA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Resistance - Rds(on): 50 Ohm
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: - 25 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2083-2; 934009000215; PMBFJ310 T/R

Philips Semiconductors
Table 7:
T
8. Dynamic characteristics
Table 8:
T
9397 750 13403
Product data sheet
Symbol
I
I
R
Symbol
C
C
g
g
g
g
V
DSS
GSS
j
j
is
fs
rs
os
y
y
n
DSon
iss
rss
= 25 C; unless otherwise specified.
= 25 C; unless otherwise specified.
fs
os
Static characteristics
Dynamic characteristics
Parameter
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
forward transfer admittance
common source output admittance I
Parameter
input capacitance
reverse transfer capacitance
input conductance
transfer conductance
reverse conductance
output conductance
equivalent input noise voltage
PMBFJ308
PMBFJ309
PMBFJ310
…continued
PMBFJ308; PMBFJ309; PMBFJ310
Conditions
V
V
V
V
V
I
Conditions
V
V
V
V
V
V
V
D
D
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DS
DS
Rev. 03 — 23 July 2004
V
V
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
f = 100 MHz
f = 450 MHz
= 10 mA; V
= 10 mA; V
GS
GS
= 10 V
= 0 V; V
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 0 V; V
= 0 V; V
= 0 V; V
= 15 V; V
= 0 V; V
= 10 V; f = 1 MHz
= 0 V; T
GS
DS
DS
DS
DS
D
D
D
D
D
DS
DS
amb
= 10 mA
= 10 mA
= 10 mA
= 10 mA
= 10 mA; f = 100 Hz
DS
= 10 V
= 10 V
= 10 V
= 100 mV
= 10 V; f = 1 MHz
= 10 V
= 10 V
= 0 V
= 25 C
N-channel silicon field-effect transistors
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Min
12
12
24
-
-
10
-
Min
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
50
-
-
Typ
3
6
1.3
200
3
13
12
150
400
6
30
450
Max Unit
60
30
60
-
-
250
Max Unit
5
-
2.5
-
-
-
-
-
-
-
-
-
1
mA
mA
mA
nA
mS
pF
pF
pF
mS
mS
mS
nV/ Hz
S
S
S
S
S
S
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