FJN598JBBU Fairchild Semiconductor, FJN598JBBU Datasheet
Home Discrete Semiconductor Products JFETs (Junction Field Effect) FJN598JBBU
Manufacturer Part Number
FJN598JBBU
Description
IC FET N-CHAN SI -20V 1MA TO-92
Manufacturer
Fairchild Semiconductor
Specifications of FJN598JBBU
Current - Drain (idss) @ Vds (vgs=0)
100µA @ 5V
Current Drain (id) - Max
1mA
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
20V
Voltage - Cutoff (vgs Off) @ Id
600mV @ 1µA
Input Capacitance (ciss) @ Vds
3.5pF @ 5V
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Power - Max
150mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2002 Fairchild Semiconductor Corporation
Capacitor Microphone Applications
• Especially Suited for use in Audio, Telephone Capacitor Microphones
• Excellent Voltage Characteristic
• Excellent Transient Characteristic
Si N-channel Junction FET
Absolute Maximum Ratings
Electrical Characteristics
I
DSS
V
I
I
P
T
T
BV
V
I
lY
C
C
G
D
DSS
Symbol
J
STG
GDO
D
GS
ISS
RSS
FS
GDO
Symbol
(off)
l
Classification
Classification
I
DSS
Gate-Drain Breakdown Voltage
Gate-Source Cut-off Voltage
Drain Current
Forward Transfer Admittance
Input Capacitance
Output Capacitance
( A)
Gate-Drain Voltage
Gate Current
Drain Current
Power Dissipation
Junction Temperature
Storage Temperature
Parameter
100 ~ 170
T
a
=25 C unless otherwise noted
A
T
Parameter
a
=25 C unless otherwise noted
FJN598J
V
V
V
V
V
I
G
DS
DS
DS
DS
DS
= -100uA
=5V, I
=5V, V
=5V, V
=5V, V
=5V, V
Test Condition
D
GS
GS
GS
GS
=1 A
=0, f=1MHz
=0
=0, f=1MHz
=0, f=1MHz
150 ~ 240
B
1. Source 2. Gate 3. Drain
1
Min.
100
-20
0.4
-55 ~ 150
Ratings
150
150
-20
10
1
Typ.
0.65
-0.6
1.2
3.5
TO-92
210 ~ 350
Max.
-1.5
C
350
Rev. B1, November 2002
Units
mW
mA
mA
V
C
C
Units
ms
pF
pF
V
V
A
Related parts for FJN598JBBU
FJN598JBBU Summary of contents
... Gate-Source Cut-off Voltage GS I Drain Current DSS lY l Forward Transfer Admittance FS C Input Capacitance ISS C Output Capacitance RSS I Classification DSS Classification DSS ©2002 Fairchild Semiconductor Corporation FJN598J T =25 C unless otherwise noted a Parameter T =25 C unless otherwise noted a Test Condition I = -100uA G V =5V =5V ...
... V [V], GATE-SOURCE VOLTAGE GS Figure 0.1 0.1 I [mA], DRAIN CURRENT DSS Figure 5. V off)-I GS( ©2002 Fairchild Semiconductor Corporation 1000 I = 200 A DSS 900 800 700 600 500 400 300 200 100 V = -0.4V = -0. ...
... Typical Characteristics [V], DRAIN-SOURCE VOLTAGE DS Figure 7. C RSS -110 -112 -114 -116 -118 -120 10 100 I [ A], DRAIN CURRENT DSS Figure ©2002 Fairchild Semiconductor Corporation (Continued) 200 175 1MHz 150 125 100 700 V :V =4. CURVE 600 I :V =5V DSS DS 500 400 300 ...
... Package Dimensions 0.46 0.10 1.27TYP [1.27 ] 0.20 ©2002 Fairchild Semiconductor Corporation TO-92 +0.25 4.58 –0.15 1.27TYP [1.27 ] 0.20 3.60 0.20 (R2.29) +0.10 0.38 –0.05 Dimensions in Millimeters Rev. B1, November 2002 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT™ ActiveArray™ FACT Quiet series™ ® Bottomless™ FAST CoolFET™ FASTr™ CROSSVOLT™ ...
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