FDC6420C Fairchild Semiconductor, FDC6420C Datasheet

MOSFET N/P-CH 20V 3.0A SSOT-6

FDC6420C

Manufacturer Part Number
FDC6420C
Description
MOSFET N/P-CH 20V 3.0A SSOT-6
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDC6420C

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
70 mOhm @ 3A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A, 2.2A
Vgs(th) (max) @ Id
1.5V @ 250µA
Gate Charge (qg) @ Vgs
4.6nC @ 4.5V
Input Capacitance (ciss) @ Vds
324pF @ 10V
Power - Max
700mW
Mounting Type
Surface Mount
Package / Case
6-SSOT, SuperSOT-6
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.07 Ohm @ 4.5 V @ N Channel
Forward Transconductance Gfs (max / Min)
10 S, 6 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3 A @ N Channel or 2.2 A @ P Channel
Power Dissipation
960 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDC6420C

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FDC6420C
20V N & P-Channel PowerTrench MOSFETs
General Description
These N & P-Channel MOSFETs are produced using
Fairchild Semiconductor’s advanced PowerTrench
process that has been especially tailored to minimize
on-state resistance and yet maintain superior
switching performance.
These
exceptional power dissipation in a very small footprint
for applications where the bigger more expensive
SO-8 and TSSOP-8 packages are impractical.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
J
DSS
GSS
D
, T
JA
JC
DC/DC converter
Load switch
LCD display inverter
Device Marking
STG
devices
.420
SuperSOT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
have
Pin 1
SuperSOT™-6
D1
S1
TM
been
-6
D2
– Continuous
– Pulsed
FDC6420C
designed
G1
Device
Parameter
S2
G2
to
offer
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
Features
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Q1 3.0 A, 20V.
Q2 –2.2 A, 20V. R
Low gate charge
High performance trench technology for extremely
SuperSOT –6 package: small footprint (72% smaller than
low R
SO-8); low profile (1mm thick).
DS(ON)
.
4
5
6
Q1
3.0
20
12
12
R
R
R
DS(ON)
DS(ON)
DS(ON)
DS(ON)
Tape width
–55 to +150
8mm
= 70 m @ V
= 95 m @ V
= 125 m
= 190 m
0.96
130
0.9
0.7
60
Q2(P)
Q1(N)
September 2001
@ V
@ V
–2.2
Q2
–20
–6
12
GS
GS
GS
GS
3
2
1
= 4.5 V
= 2.5 V
= –4.5 V
= –2.5 V
FDC6420C Rev C(W)
3000 units
Quantity
Units
C/W
C/W
W
V
V
A
C

Related parts for FDC6420C

FDC6420C Summary of contents

Page 1

... Reel Size 7’’ September 2001 4.5 V DS(ON 2.5 V DS(ON 125 –4.5 V DS(ON 190 –2.5 V DS(ON) GS Q2( Q1( Units 20 – 3.0 –2 –6 0.96 0.9 W 0.7 –55 to +150 C C/W 130 C/W 60 Tape width Quantity 8mm 3000 units FDC6420C Rev C(W) ...

Page 2

... Typ Max Units 20 V –20 13 mV/ C – –1 100 nA 100 –100 nA –100 0.5 0.9 1.5 V –0.6 –1.0 –1.5 mV/ C –3 – 106 71 100 125 190 145 184 137 12 A – 324 pF 337 1 3.3 4.6 nC 3.7 0.95 nC 0.68 0.7 nC 1.3 FDC6420C Rev C(W) ...

Page 3

... A Test Conditions 0 (Note 0 (Note determined by the user's board design 140 °C/W when 2 mounted on a .004 in pad copper Min Typ Max Units 0 –0.8 Q2 0.7 1.2 V –0.8 –1.2 c) 180 C°/W when mounted on a minimum pad. FDC6420C Rev C(W) ...

Page 4

... C 1 0.1 0.01 0.001 0.0001 2 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 2.5V 3.0V 3.5V 4. DRAIN CURRENT ( 1. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6420C Rev C( 1.2 ...

Page 5

... Figure 9. Maximum Safe Operating Area. 450 10V 360 15V 270 180 RSS Figure 8. Capacitance Characteristics 1ms 10ms 0.1 10 100 Figure 10. Single Pulse Maximum MHz ISS OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 180°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. FDC6420C Rev C(W) 20 ...

Page 6

... Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature -2.0V GS -2.5V -3.0V -3.5V -4. DRAIN CURRENT ( -1 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDC6420C Rev C( 1.2 ...

Page 7

... Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design 1MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 180°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( 180°C/W JA P(pk ( Duty Cycle 100 1000 FDC6420C Rev C(W) ...

Page 8

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...

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