PMGD280UN,115 NXP Semiconductors, PMGD280UN,115 Datasheet - Page 10

• Manufacturer Part Number: PMGD280UN,115
• Description: MOSFET N-CH TRENCH DL 20V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD280UN,115

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 870mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2365-2; 934057726115; PMGD280UN T/R

Philips Semiconductors
8. Soldering
9. Revision history
Table 6:
9397 750 12763
Product data
Rev Date
Fig 15. Reflow soldering footprint for SOT363 (SC-88).
01
Dimensions in mm.
20040210
Revision history
CPCN
-
solder lands
solder resist
occupied area
solder paste
Description
Product data (9397 750 12763).
2.35
Rev. 01 — 10 February 2004
0.50
(4 )
0.50
(4 )
Dual N-channel TrenchMOS™ ultra low level FET
2.65
1.20
2.40
0.60
(2 )
MSA432
0.40
(2 )
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
0.90 2.10
PMGD280UN
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