PMGD280UN,115 NXP Semiconductors, PMGD280UN,115 Datasheet - Page 3

• Manufacturer Part Number: PMGD280UN,115
• Description: MOSFET N-CH TRENCH DL 20V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD280UN,115

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 870mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2365-2; 934057726115; PMGD280UN T/R

Philips Semiconductors
9397 750 12763
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
I D
T
P
P der
10 -1
10 -2
(%)
sp
120
der
10
80
40
1
0
= 25 C; I
function of solder point temperature.
10 -1
0
=
---------------------- -
P
tot 25 C
P
DM
tot
50
is single pulse; V
100%
Limit R DSon = V DS / I D
100
GS
= 4.5 V
150
T sp ( C)
1
03aa17
200
Rev. 01 — 10 February 2004
DC
Fig 2. Normalized continuous drain current as a
Dual N-channel TrenchMOS™ ultra low level FET
I
I der
(%)
120
der
80
40
0
function of solder point temperature.
=
0
-------------------
I
D 25 C
10
I
D
50
100%
1 ms
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
t p = 10 s
100 s
10 ms
100 ms
100
PMGD280UN
V DS (V)
150
T sp ( C)
03an09
03aa25
10 2
200
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