PMGD280UN,115 NXP Semiconductors, PMGD280UN,115 Datasheet - Page 7
![MOSFET N-CH TRENCH DL 20V SOT363](/photos/5/31/53138/568-umt6_sot-363_sc-88__sot363_sml.jpg)
PMGD280UN,115
Manufacturer Part Number
PMGD280UN,115
Description
MOSFET N-CH TRENCH DL 20V SOT363
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMGD280UN115.pdf
(12 pages)
Specifications of PMGD280UN,115
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
340 mOhm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
870mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.89nC @ 4.5V
Input Capacitance (ciss) @ Vds
45pF @ 20V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2365-2
934057726115
PMGD280UN T/R
934057726115
PMGD280UN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMGD280UN,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
9397 750 12763
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
0.8
0.6
0.4
0.2
= 0.25 mA; V
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
0
= V
GS
min
typ
60
(pF)
C
10 2
10
120
1
10 -1
T j ( C)
03aj65
Rev. 01 — 10 February 2004
180
1
Fig 10. Sub-threshold drain current as a function of
Dual N-channel TrenchMOS™ ultra low level FET
10
(A)
I D
T
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03an06
DS
10 2
= 5 V
0.2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
min
0.4
PMGD280UN
0.6
typ
V GS (V)
03am43
0.8
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