PMGD280UN,115 NXP Semiconductors, PMGD280UN,115 Datasheet - Page 7

• Manufacturer Part Number: PMGD280UN,115
• Description: MOSFET N-CH TRENCH DL 20V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD280UN,115

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 340 mOhm @ 200mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 870mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 0.89nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 45pF @ 20V
• Power - Max: 400mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-2365-2; 934057726115; PMGD280UN T/R

Philips Semiconductors
9397 750 12763
Product data
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
V GS(th)
I
V
(V)
D
GS
0.8
0.6
0.4
0.2
= 0.25 mA; V
1
0
junction temperature.
= 0 V; f = 1 MHz
-60
DS
0
= V
GS
min
typ
60
(pF)
C
10 2
10
120
1
10 -1
T j ( C)
03aj65
Rev. 01 — 10 February 2004
180
1
Fig 10. Sub-threshold drain current as a function of
Dual N-channel TrenchMOS™ ultra low level FET
10
(A)
I D
T
10 -3
10 -4
10 -5
10 -6
j
= 25 C; V
gate-source voltage.
V DS (V)
0
C iss
C oss
C rss
03an06
DS
10 2
= 5 V
0.2
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
min
0.4
PMGD280UN
0.6
typ
V GS (V)
03am43
0.8
7 of 12