PMGD280UN,115 NXP Semiconductors, PMGD280UN,115 Datasheet - Page 8
![MOSFET N-CH TRENCH DL 20V SOT363](/photos/5/31/53138/568-umt6_sot-363_sc-88__sot363_sml.jpg)
PMGD280UN,115
Manufacturer Part Number
PMGD280UN,115
Description
MOSFET N-CH TRENCH DL 20V SOT363
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PMGD280UN115.pdf
(12 pages)
Specifications of PMGD280UN,115
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
340 mOhm @ 200mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
870mA
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
0.89nC @ 4.5V
Input Capacitance (ciss) @ Vds
45pF @ 20V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2365-2
934057726115
PMGD280UN T/R
934057726115
PMGD280UN T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMGD280UN,115
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
9397 750 12763
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
0.8
0.6
0.4
0.2
= 25 C and 150 C; V
1
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
150 C
0.5
GS
= 0 V
T j = 25 C
1
V SD (V)
03an05
Rev. 01 — 10 February 2004
1.5
Fig 13. Gate-source voltage as a function of gate
Dual N-channel TrenchMOS™ ultra low level FET
I
V GS
D
(V)
= 1 A; V
5
4
3
2
1
0
charge; typical values.
0
I D = 1 A
T j = 25 C
V DD = 10 V
DD
0.2
= 10 V
0.4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMGD280UN
0.6
0.8
Q G (nC)
03an07
1
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