FDC6020C_F077 Fairchild Semiconductor, FDC6020C_F077 Datasheet - Page 2

• Manufacturer Part Number: FDC6020C_F077
• Description: MOSFET N P-CH 20V 6-SSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6020C_F077

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.9A, 4.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 677pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.027 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.9 A @ N Channel or 4.2 A @ P Channel
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

V
∆V
R
g
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
BV
∆BV
I
I
R
d(on)
r
d(off)
f
Electrical Characteristics
Off Characteristics
DSS
GSS
On Characteristics
Dynamic Characteristics
Symbol
FS
GS(th)
∆T
DS(on)
iss
oss
rss
g
gs
gd
∆T
G
GS(th)
DSS
J
DSS
J
Drain-Source Breakdown
Voltage
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Parameter
(Note 2)
V
V
I
I
V
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
Q1:
V
Q2:
V
Q1:
V
V
Q2:
V
V
Q1:
V
Q2:
V
D
D
D
D
f = 1.0 MHz
f = 1.0 MHz
V
GS
GS
DS
DS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DD
GS
DD
GS
DS
DS
GS
= –250 µA, Referenced to 25°C
= 250 µA, Referenced to 25°C
= –250 µA, Referenced to 25°C
= 250 µA, Referenced to 25°C
= 0 V,
= 0 V,
= –16 V,
= 16 V,
= +12 V,
= +12 V,
= V
= V
= –4.5 V,
= –2.5 V,
= –4.5 V, I
= 4.5 V,
= 2.5 V,
= 4.5 V, I
= –5 V,
= 5 V,
= –10 V, V
= 10 V, V
= –10 V,
= –4.5 V,
= 10 V,
= 4.5V,
= –10 V,I
= 10 V, I
= 15mV,
T
Test Conditions
A
GS
GS
= 25°C unless otherwise noted
,
,
D
D
D
GS
= 5.9 A,V
D
GS
= –4.2 A,V
= 5.9 A, T
= –4.2 A,T
= 0 V,
= 0 V,
I
I
V
V
V
V
I
I
I
I
I
I
I
I
f = 1.0 MHz
I
R
I
R
D
D
D
D
D
D
D
D
D
D
D
D
GS
GS
DS
DS
GEN
GEN
= –250 µA
= 250 µA
= –250 µA
= 250 µA
= –4.2 A
= –3.4 A
= 5.9 A
= 4.9 A
= – 4.2 A
= 5.9 A
= –1 A,
= 1 A,
GS
= 0 V
= 0 V
= 0 V
= 0 V
J
= 6 Ω
= 6 Ω
GS
= 125°C
= 4.5 V
J
= –4.5V
=125°C
Type Min Typ Max Units
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
–0.6
–20
0.6
20
–1.0
–14
753
677
163
171
1.0
2.2
1.6
1.5
1.9
1.8
12
–3
45
65
58
23
33
31
13
23
83
91
13
11
16
26
18
14
3
8
8
7
7
6
+100
+100
–1.5
1.5
–1
55
82
73
27
39
39
23
20
16
29
42
32
52
14
10
FDC6020C RevB (W)
1
8
mV/°C
mV/°C
mΩ
µA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
Ω
V
V
S