FDC6020C_F077 Fairchild Semiconductor, FDC6020C_F077 Datasheet - Page 5

• Manufacturer Part Number: FDC6020C_F077
• Description: MOSFET N P-CH 20V 6-SSOP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6020C_F077

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 27 mOhm @ 5.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.9A, 4.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 8nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 677pF @ 10V
• Power - Max: 1.2W
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT FLMP, SuperSOT-6 FLMP
• Configuration: Dual Dual Source
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.027 Ohm @ 4.5 V @ N Channel
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5.9 A @ N Channel or 4.2 A @ P Channel
• Power Dissipation: 1800 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Characteristics : Q1
0.01
100
0.1
10
5
4
3
2
1
0
1
Figure 9. Maximum Safe Operating Area.
0.1
Figure 7. Gate Charge Characteristics.
0
I
D
R
SINGLE PULSE
= -4.2A
R
DS(ON)
θJA
1
V
T
GS
A
= 102
= 25
= -4.5V
LIMIT
2
o
o
C/W
C
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
3
Q
1
g
, GATE CHARGE (nC)
DC
1s
4
100ms
V
10ms
DS
5
1ms
= -5V
100µs
6
10
10µs
-15V
7
8
-10V
9
100
1100
1000
900
800
700
600
500
400
300
200
100
10
0
8
6
4
2
0
Figure 8. Capacitance Characteristics.
0.01
0
Figure 10. Single Pulse Maximum
C
RSS
C
OSS
0.1
4
-V
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
ISS
8
1
t
1
, TIME (sec)
12
10
SINGLE PULSE
R
θJA
16
T
FDC6020C RevB (W)
100
A
= 102°C/W
f = 1 MHz
V
= 25°C
GS
= 0 V
20
1000