SI4542DY Fairchild Semiconductor, SI4542DY Datasheet
SI4542DY
Manufacturer Part Number
SI4542DY
Description
MOSFET N/P-CH COMPL 30V 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.SI4542DY.pdf
(4 pages)
Specifications of SI4542DY
Fet Type
N and P-Channel
Fet Feature
Standard
Rds On (max) @ Id, Vgs
28 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 5V
Input Capacitance (ciss) @ Vds
830pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Dual Dual Drain
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
0.028 Ohm @ 10 V @ N Channel
Forward Transconductance Gfs (max / Min)
18 S, 16 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6 A
Power Dissipation
2000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
SI4542DY
Manufacturer:
VIS
Quantity:
8 000
Part Number:
SI4542DY
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
SI4542DY-T1
Manufacturer:
HOLTEK
Quantity:
6 500
Company:
Part Number:
SI4542DY-T1-E3
Manufacturer:
ON
Quantity:
1 600
Part Number:
SI4542DY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4542DY-T1-GE3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Si4542DY
30V Complementary PowerTrench MOSFET
General Description
This complementary MOSFET device is produced using
Fairchild’s advanced PowerTrench process that has
been especially tailored to minimize the on-state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
2001 Fairchild Semiconductor International
Absolute Maximum Ratings
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
Symbol
D
DC/DC converter
Power management
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
4542
SO-8
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
D1
Pin 1
D
D1
SO-8
D
D2
- Continuous
- Pulsed
D
Si4542DY
D2
Device
Parameter
S1
S
G1
S
S2
S
G2
T
G
A
= 25°C unless otherwise noted
Reel Size
13”
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Features
Q1: N-Channel
6 A, 30 V
Q2: P-Channel
–6 A, –30 V
5
6
7
8
Q1
30
20
20
6
Tape width
–55 to +175
12mm
Q2
Q1
R
R
R
R
1.6
1.2
78
40
DS(on)
DS(on)
DS(on)
DS(on)
2
1
= 28 m
= 35 m
= 32 m
= 45 m
Q2
–30
–20
–6
20
January 2001
4
3
2
1
@ V
@ V
@ V
@ V
2500 units
Quantity
GS
GS
GS
GS
Si4542DY Rev A
= 10V
= 4.5V
= –10V
= –4.5V
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
SI4542DY Summary of contents
Page 1
... A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13” January 2001 10V DS(on 4.5V DS(on –10V DS(on –4.5V DS(on Units 30 – – – 1.6 1.2 1 –55 to +175 C 78 C/W 40 C/W Tape width Quantity 12mm 2500 units Si4542DY Rev A ...
Page 2
... GS GEN – – – GEN 7 – – – Type Min Typ Max Units – mV – –1 Q1 +100 nA Q2 +100 –1 –1.7 –3 Q1 –4 mV – 830 pF Q2 1540 Q1 185 pF Q2 400 170 Type Min Typ Max Units 2 3 Si4542DY Rev A ...
Page 3
... Scale letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2. 1.3 A (Note –1.3 A (Note determined by the user's board design 125°C/W when 2 mounted on a .02 in pad copper Q1 1 –1.3 Q1 0.7 1 –0.7 –1.2 c) 135°C/W when mounted on a minimum pad. Si4542DY Rev A ...
Page 4
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...