TPC8405(TE12L,Q,M) Toshiba, TPC8405(TE12L,Q,M) Datasheet

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TPC8405(TE12L,Q,M)

Manufacturer Part Number
TPC8405(TE12L,Q,M)
Description
MOSFET N/P-CH 30V SOP8 2-6J1E
Manufacturer
Toshiba
Datasheet

Specifications of TPC8405(TE12L,Q,M)

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A, 4.5A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
1240pF @ 10V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
42 mOhms
Drain-source Breakdown Voltage
- 30 V
Power Dissipation
0.45 W, 0.75 W
Mounting Style
Through Hole
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lithium Ion Secondary Battery Applications
Portable Equipment Applications
Notebook PC Applications
Absolute Maximum Ratings
Low drain-source ON resistance : P Channel R
High forward transfer admittance : P Channel |Y
Low leakage current : P Channel I
Enhancement-mode
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 10s)
Drain power
dissipation
(t = 10s)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy
Single-device value at operation
Channel temperature
Storage temperature range
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with care.
: P Channel V
(Note 2a)
(Note 2b)
N Channel V
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DC
Pulse
Single-device operation
Single-device value at
dual operation (Note 3b)
Single-device operation
Single-device value at
dual operation (Note 3b)
th
th
TOSHIBA Field Effect Transistor Silicon N, P Channel MOS Type
GS
= −0.8 to −2.0 V (V
= 1.3 to 2.5 V (V
(Note 2a, 3b, 5)
= 20 kΩ)
N Channel I
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
(P Channel U−MOS IV/N Channel U-MOS III)
N Channel R
DSS
DSS
(Ta = 25°C)
Symbol
DS
N Channel |Y
V
P
P
P
P
V
V
E
E
T
I
I
T
DGR
D (1)
D (2)
D (1)
D (2)
DSS
GSS
I
DP
AR
DS
stg
AS
AR
D
ch
= 10 V, I
= −10 μA (V
= 10 μA (V
TPC8405
= −10 V, I
P Channel N Channel
(Note 4a)
−4.5
−4.5
0.75
0.45
13.2
−30
−30
−18
±20
1.5
1.1
DS (ON)
DS (ON)
D
−55 to 150
= 1 mA)
DS
fs
fs
Rating
DS
D
| = 12S (typ.)
150
| = 14S (typ.)
0.1
= −1 mA)
= 30 V)
1
= −30 V)
= 25 mΩ (typ.)
(Note 4b)
= 20 mΩ (typ.)
0.75
0.45
23.4
±20
1.5
1.1
30
30
24
6
6
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.080 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
2-6J1E
2009-09-29
TPC8405
Unit: mm

Related parts for TPC8405(TE12L,Q,M)

TPC8405(TE12L,Q,M) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ...

Page 3

P-ch Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total ...

Page 4

N-ch Electrical Characteristics Characteristics Gate leakage current Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF time Total ...

Page 5

P-ch I – −10 −10 −6 −4 −3.2 −8 −2.8 −8 −6 −4 −2 0 −0.2 −0.4 −0.6 0 Drain−source voltage V I – −18 Common source −10 V −15 Pulse ...

Page 6

P-ch R – (ON) 50 Common source −1.3 A, −2.2 A, −4.5 A Pulse test −4 −1.3 A, −2.2 A, −4 ...

Page 7

P-ch 1000 Single pulse 100 10 1 0.1 0.001 0.01 Safe operating area −100 Single-device value at dual operation (Note 3b max (Pulse)* −10 10 ms* −1 *: Single nonrepetitive pulse Ta = 25°C Curves must be derated ...

Page 8

N-ch I – 3 3.8 3.6 3 0.2 0.4 Drain−source voltage V I – Common source Pulse test ...

Page 9

N-ch R – (ON) 50 Common source Pulse test ...

Page 10

N-ch 1000 Single pulse 100 10 1 0.1 0.001 0.01 Safe operating area 100 Single-device value at dual operation (Note 3b max (Pulse ms Single nonrepetitive pulse Ta = 25°C Curves must be ...

Page 11

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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