TPC8405(TE12L,Q,M) Toshiba, TPC8405(TE12L,Q,M) Datasheet - Page 7
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TPC8405(TE12L,Q,M)
Manufacturer Part Number
TPC8405(TE12L,Q,M)
Description
MOSFET N/P-CH 30V SOP8 2-6J1E
Manufacturer
Toshiba
Datasheet
1.TPC8405TE12LQM.pdf
(11 pages)
Specifications of TPC8405(TE12L,Q,M)
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A, 4.5A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
1240pF @ 10V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
42 mOhms
Drain-source Breakdown Voltage
- 30 V
Power Dissipation
0.45 W, 0.75 W
Mounting Style
Through Hole
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
P-ch
−100
−0.1
−10
−1
−0.1
Single-device value at dual
operation (Note 3b)
*: Single nonrepetitive pulse
Curves must be derated
linearly with increase in
temperature
I D max (Pulse)*
Ta = 25°C
Drain−source voltage V
1000
100
Safe operating area
0.1
10
0.001
−1
1
Single pulse
10 ms*
V DSS max
0.01
−10
DS
1 ms*
(V)
0.1
−100
Pulse width t
r
th
7
− t
1
Device mounted on a glass-epoxy board (a) (Note 2a)
Device mounted on a glass-epoxy board (b) (Note 2b)
t = 10 s
w
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
w
(s)
10
100
(4)
(3)
(2)
(1)
1000
2009-09-29
TPC8405