TPC8405(TE12L,Q,M) Toshiba, TPC8405(TE12L,Q,M) Datasheet - Page 5
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TPC8405(TE12L,Q,M)
Manufacturer Part Number
TPC8405(TE12L,Q,M)
Description
MOSFET N/P-CH 30V SOP8 2-6J1E
Manufacturer
Toshiba
Datasheet
1.TPC8405TE12LQM.pdf
(11 pages)
Specifications of TPC8405(TE12L,Q,M)
Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
26 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
6A, 4.5A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
27nC @ 10V
Input Capacitance (ciss) @ Vds
1240pF @ 10V
Power - Max
750mW
Mounting Type
Surface Mount
Package / Case
*
Configuration
Dual
Transistor Polarity
N and P-Channel
Resistance Drain-source Rds (on)
42 mOhms
Drain-source Breakdown Voltage
- 30 V
Power Dissipation
0.45 W, 0.75 W
Mounting Style
Through Hole
Gate Charge Qg
40 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
P-ch
−10
−18
−15
−12
100
−8
−6
−4
−2
−9
−6
−3
10
−0.1
0
0
1
0
0
Common source
V DS = −10 V
Pulse test
Common source
V DS = −10 V
Pulse test
−10
−8
Drain−source voltage V
Gate−source voltage V
Ta = −55°C
−0.2
−1
Drain current I
Ta = −55°C
−6
25
−1
−0.4
−4
−2
I
I
|Y
D
D
fs
100
– V
– V
−3.2
| – I
DS
GS
−0.6
D
−2.8
−3
D
100
−10
GS
(A)
DS
Common source
Ta = 25°C
Pulse test
−2.6
−0.8
−4
25
V GS = −2 V
(V)
(V)
−2.1
−2.4
−2.3
−2.2
−100
−1.0
−5
5
−0.6
−0.5
−0.4
−0.3
−0.2
−0.1
−18
−15
−12
100
−9
−6
−3
10
−0.1
0
0
1
0
0
−10
−6
−1.3
Drain−source voltage V
Gate−source voltage V
−4 −3.2
−2
−1
Drain current I
−4
−1
R
−2
V
DS (ON)
I
DS
D
– V
−6
– V
−2.8
V GS = −4.5 V
DS
GS
– I
−3
D
D
−10
−8
−10
−2.6
Common source
Ta = 25°C
Pulse test
GS
(A)
Common source
Ta = 25°C
Pulse test
DS
Common source
Ta = 25°C
Pulse test
−2.4
V GS = −2 V
−2.3
−4
(V)
(V)
−10
I D = −4.5 A
−2.2
−2.1
2009-09-29
−2.2
TPC8405
−100
−12
−5