BSH111,215 NXP Semiconductors, BSH111,215 Datasheet

BSH111,215

Manufacturer Part Number

BSH111,215

Description

MOSFET N-CH 55V 335MA SOT-23

Manufacturer

NXP Semiconductors

Series

TrenchMOS™r

Type

Power MOSFETr

Datasheet

1.BSH111215.pdf (13 pages)

Specifications of BSH111,215

Package / Case

SOT-23-3, TO-236-3, Micro3™, SSD3, SST3

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

4 Ohm @ 500mA, 4.5V

Drain To Source Voltage (vdss)

55V

Current - Continuous Drain (id) @ 25° C

335mA

Vgs(th) (max) @ Id

1.3V @ 1mA

Gate Charge (qg) @ Vgs

1nC @ 10V

Input Capacitance (ciss) @ Vds

40pF @ 10V

Power - Max

830mW

Mounting Type

Surface Mount

Minimum Operating Temperature

- 65 C

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

4 Ohm @ 4.5 V

Gate Charge Qg

0.05 nC

Forward Transconductance Gfs (max / Min)

380 S

Drain-source Breakdown Voltage

55 V

Gate-source Breakdown Voltage

+/- 10 V

Continuous Drain Current

0.335 A

Power Dissipation

830 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

4Ohm

Drain-source On-volt

55V

Gate-source Voltage (max)

±10V

Operating Temp Range

-65C to 150C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

Package Type

TO-236AB

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

568-1657-2
934056036215
BSH111 T/R

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1. Description

2. Features

3. Applications

4. Pinning information

Table 1:

Pinning - SOT23, simpliﬁed outline and symbol

Description

gate (g)

source (s)

drain (d)

M3D088

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS™ technology.

Product availability:

BSH111 in SOT23.

BSH111

N-channel enhancement mode ﬁeld-effect transistor

Rev. 02 — 26 April 2002

TrenchMOS™ technology

Very fast switching

Low threshold voltage

Subminiature surface mount package.

Battery management

High speed switch

Logic level translator.

Simpliﬁed outline

Top view

SOT23

MSB003

Symbol

MBB076

Product data

Related parts for BSH111,215

BSH111,215 Summary of contents

Page 1

BSH111 N-channel enhancement mode ﬁeld-effect transistor Rev. 02 — 26 April 2002 M3D088 1. Description N-channel enhancement mode ﬁeld-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: BSH111 in SOT23. 2. Features TrenchMOS™ technology Very fast switching Low ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 P tot P = ---------------------- 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of solder point temperature Limit ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to th(j-sp) solder point R thermal resistance from junction to th(j-a) ambient 7.1 Transient thermal impedance th(j-sp) (K/ ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise speciﬁed j Symbol Parameter Static characteristics V drain-source breakdown (BR)DSS voltage V gate-source threshold voltage I GS(th) I drain-source leakage current DSS I gate-source leakage current GSS ...

Page 6

Philips Semiconductors Table 5: Characteristics …continued unless otherwise speciﬁed j Symbol Parameter Source-drain diode V source-drain (diode forward) SD voltage t reverse recovery time rr Q recovered charge r 9397 750 09629 Product data N-channel enhancement ...

Page 7

Philips Semiconductors 0 (A) 0.6 0.4 0 0.4 0.8 1 Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values DSon ( ) ...

Page 8

Philips Semiconductors 2 V GS(th) (V) 1.6 1.2 typ 0.8 min 0 Fig 9. Gate-source threshold voltage as a function of junction temperature. 0 ...

Page 9

Philips Semiconductors (A) 0.8 150 C 0.6 0.4 0 0.4 0 and 150 Fig 13. Source (diode forward) current as a function of source-drain ...

Page 10

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION ...

Page 11

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 02 20020426 - Product data (9397 750 09629) Modiﬁcations • 20000807 - Product speciﬁcation; initial version. 9397 750 09629 Product data N-channel enhancement mode ...

Page 12

Philips Semiconductors Philips Semiconductors 11. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualiﬁcation Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...

Page 13

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

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