BSH111,215 NXP Semiconductors, BSH111,215 Datasheet - Page 5

• Manufacturer Part Number: BSH111,215
• Description: MOSFET N-CH 55V 335MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSH111,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 335mA
• Vgs(th) (max) @ Id: 1.3V @ 1mA
• Gate Charge (qg) @ Vgs: 1nC @ 10V
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V
• Gate Charge Qg: 0.05 nC
• Forward Transconductance Gfs (max / Min): 380 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 0.335 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 4Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±10V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1657-2; 934056036215; BSH111 T/R

Philips Semiconductors
8. Characteristics
Table 5:
T
9397 750 09629
Product data
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
Q
Q
Q
C
C
C
t
t
DSS
GSS
on
off
j
fs
(BR)DSS
GS(th)
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
forward transconductance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
Conditions
I
Figure 9
V
V
V
Figure 7
V
Figure 7
V
Figure 7
V
Figure 11
I
V
V
f = 1 MHz;
V
V
R
D
D
D
DS
GS
GS
GS
GS
DS
GS
GS
DD
GS
GS
T
T
T
T
T
T
T
T
T
T
T
= 10 A; V
= 1 mA; V
= 0.5 A; V
j
j
j
j
j
j
j
j
j
j
j
= 44 V; V
= 10 V; I
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 8 V; V
= 2.5 V; I
= 25 C
= 150 C
= 4.5 V; I
= 25 C
= 1.8 V; I
= 25 C
= 8 V;
= 0 V; V
= 50 V; R
= 10 V; R
= 50
Rev. 02 — 26 April 2002
and
and
and
Figure 12
Figure 14
DS
DS
DS
D
GS
8
8
8
D
D
D
GS
DS
D
G
= 200 mA;
= V
= 75 mA;
= 500 mA;
= 75 mA;
= 44 V;
= 10 V;
= 250 ;
= 50 ;
= 0 V
= 0 V
= 0 V
N-channel enhancement mode field-effect transistor
GS
;
Min
55
50
0.4
0.3
-
-
-
-
-
-
-
-
100
-
-
-
-
-
-
-
-
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
75
-
1.0
-
-
0.01
-
10
2.4
-
2.3
3.1
380
1.0
0.05
0.5
17
7
4
4
11
Max
-
-
1.3
-
2.5
1.0
10
100
5
7.4
4
8
-
-
-
-
40
30
10
10
15
BSH111
Unit
V
V
V
V
V
nA
mS
nC
nC
nC
pF
pF
pF
ns
ns
5 of 13
A
A