BSH111,215 NXP Semiconductors, BSH111,215 Datasheet - Page 2

• Manufacturer Part Number: BSH111,215
• Description: MOSFET N-CH 55V 335MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSH111,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 335mA
• Vgs(th) (max) @ Id: 1.3V @ 1mA
• Gate Charge (qg) @ Vgs: 1nC @ 10V
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V
• Gate Charge Qg: 0.05 nC
• Forward Transconductance Gfs (max / Min): 380 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 0.335 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 4Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±10V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1657-2; 934056036215; BSH111 T/R

Philips Semiconductors
5. Quick reference data
Table 2:
6. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
9397 750 09629
Product data
Symbol Parameter
V
I
P
T
R
Symbol Parameter
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
D
DM
S
SM
DS
tot
j
DS
DGR
GS
tot
stg
j
DSon
drain-source voltage (DC)
drain current (DC)
total power dissipation
junction temperature
drain-source on-state resistance
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage
drain current (DC)
peak drain current
total power dissipation
storage temperature
junction temperature
source (diode forward) current (DC)
peak source (diode forward) current
Quick reference data
Limiting values
Conditions
25 C
T
T
V
V
V
Conditions
25 C
25 C
T
Figure 2
T
T
Figure 3
T
T
T
Rev. 02 — 26 April 2002
sp
sp
GS
GS
GS
sp
sp
sp
sp
sp
sp
= 25 C; V
= 25 C
= 25 C; V
= 100 C; V
= 25 C; pulsed; t
= 25 C;
= 25 C
= 25 C; pulsed; t
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
T
T
T
and
j
j
j
N-channel enhancement mode field-effect transistor
150 C
150 C
150 C; R
Figure 1
3
D
D
D
GS
GS
= 500 mA
= 75 mA
= 75 mA
GS
= 4.5 V
= 4.5 V;
= 4.5 V;
p
p
GS
10 s;
10 s
= 20 k
Figure 2
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Typ
-
-
-
-
2.3
2.4
3.1
Min
-
-
-
-
-
-
-
-
-
65
65
Max
55
335
0.83
150
4.0
5.0
8.0
Max
55
55
335
212
1.3
0.83
+150
+150
335
1.3
BSH111
10
Unit
V
mA
W
Unit
V
V
V
mA
mA
A
W
mA
A
C
C
C
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