BSH111,215 NXP Semiconductors, BSH111,215 Datasheet - Page 7

• Manufacturer Part Number: BSH111,215
• Description: MOSFET N-CH 55V 335MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSH111,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 335mA
• Vgs(th) (max) @ Id: 1.3V @ 1mA
• Gate Charge (qg) @ Vgs: 1nC @ 10V
• Input Capacitance (ciss) @ Vds: 40pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 Ohm @ 4.5 V
• Gate Charge Qg: 0.05 nC
• Forward Transconductance Gfs (max / Min): 380 S
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 10 V
• Continuous Drain Current: 0.335 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 4Ohm
• Drain-source On-volt: 55V
• Gate-source Voltage (max): ±10V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1657-2; 934056036215; BSH111 T/R

Philips Semiconductors
9397 750 09629
Product data
Fig 5. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
R DSon
T
T
(A)
I
D
( )
j
j
0.8
0.6
= 25 C
= 25 C
0.4
0.2
16
20
12
function of drain-source voltage; typical values.
of drain current; typical values.
0
8
4
0
0
0
1.4 V
1.6 V
1.8 V
0.4
0.2
2 V
0.8
3 V
0.4
1.2
V GS = 4.5 V
V GS = 4.5 V
0.6
1.6
V DS (V)
I D (A)
03aa73
1.8 V
1.6 V
1.4 V
3 V
03aa74
2 V
0.8
2
Rev. 02 — 26 April 2002
N-channel enhancement mode field-effect transistor
Fig 6. Transfer characteristics: drain current as a
Fig 8. Normalized drain-source on-state resistance
(A)
I D
a
T
a
j
2.4
1.8
= 25 C and 150 C; V
=
1.2
0.6
0.6
0.4
0.2
0.8
function of gate-source voltage; typical values.
factor as a function of junction temperature.
0
0
--------------------------- -
R
-60
DSon 25 C
0
R
DSon
1
0
2
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
DS
T j = 25 C
60
I
D
3
R
DSon
150 C
120
4
T j ( C)
BSH111
V GS (V)
03aa75
180
5
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