PH8230E,115 NXP Semiconductors, PH8230E,115 Datasheet - Page 10
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PH8230E,115
Manufacturer Part Number
PH8230E,115
Description
MOSFET N-CH 30V 67A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PH8230E115.pdf
(12 pages)
Specifications of PH8230E,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1400pF @ 10V
Power - Max
62.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0082 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
62500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2350-2
934057745115
PH8230E T/R
934057745115
PH8230E T/R
NXP Semiconductors
8. Revision history
Table 7.
PH8230E_4
Product data sheet
Document ID
PH8230E_4
Modifications:
PH8230E-03
PH8230E-02
PH8230E-01
Revision history
Release date
20091117
20040302
20030429
20030304
•
•
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Data sheet status
Product data sheet
Product data
Product data
Preliminary data
Rev. 04 — 17 November 2009
Change notice
-
-
-
-
N-channel TrenchMOS logic level FET
Supersedes
PH8230E-03
PH8230E-02
PH8230E-01
-
PH8230E
© NXP B.V. 2009. All rights reserved.
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