PH8230E,115 NXP Semiconductors, PH8230E,115 Datasheet - Page 6
![MOSFET N-CH 30V 67A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PH8230E,115
Manufacturer Part Number
PH8230E,115
Description
MOSFET N-CH 30V 67A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PH8230E115.pdf
(12 pages)
Specifications of PH8230E,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1400pF @ 10V
Power - Max
62.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0082 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
62500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2350-2
934057745115
PH8230E T/R
934057745115
PH8230E T/R
NXP Semiconductors
PH8230E_4
Product data sheet
Fig 5.
Fig 7.
(A)
I
(A)
D
I
10
10
10
10
D
10
−2
−5
8
6
4
2
0
−3
−4
function of drain-source voltage; typical values
gate-source voltage
Output characteristics: drain current as a
Sub-threshold drain current as a function of
0
0
0.5
min
10 V
4 V
1
1
typ
2
V
max
1.5
GS
V
GS
= 3.2 V
V
003aaa371
DS
3.1 V
2.8V
2.9 V
03am28
(V)
3 V
(V)
Rev. 04 — 17 November 2009
2
3
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
D
10
3
2
8
6
4
2
0
0
1
−60
function of gate-source voltage; typical values
junction temperature
Transfer characteristics: drain current as a
Gate-source threshold voltage as a function of
1
N-channel TrenchMOS logic level FET
0
T
2
j
= 150 °C
60
max
min
typ
3
25 °C
120
PH8230E
© NXP B.V. 2009. All rights reserved.
V
GS
T
003aaa372
003aaa414
j
(°C)
(V)
180
4
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