PH8230E,115 NXP Semiconductors, PH8230E,115 Datasheet - Page 3

• Manufacturer Part Number: PH8230E,115
• Description: MOSFET N-CH 30V 67A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH8230E,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0082 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2350-2; 934057745115; PH8230E T/R

NXP Semiconductors
PH8230E_4
Product data sheet
Fig 1.
Fig 3.
(A)
I
10
D
(%)
10
10
I
der
10
120
−1
3
2
1
80
40
10
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
50
100
Limit R
150
DSon
T
mb
1
= V
03aa23
(°C)
DS
Rev. 04 — 17 November 2009
200
/ I
D
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
N-channel TrenchMOS logic level FET
50
100
100 μ s
1 ms
10 ms
100 ms
t
p
= 10 μ s
V
DS
150
PH8230E
© NXP B.V. 2009. All rights reserved.
(V)
T
mb
003aaa369
03aa15
(°C)
200
10
2
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