PH8230E,115 NXP Semiconductors, PH8230E,115 Datasheet - Page 3
![MOSFET N-CH 30V 67A LFPAK](/photos/5/48/54859/568-lfpak-4_sot669_sml.jpg)
PH8230E,115
Manufacturer Part Number
PH8230E,115
Description
MOSFET N-CH 30V 67A LFPAK
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.PH8230E115.pdf
(12 pages)
Specifications of PH8230E,115
Package / Case
LFPak-4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.2 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
2.5V @ 1mA
Gate Charge (qg) @ Vgs
14nC @ 5V
Input Capacitance (ciss) @ Vds
1400pF @ 10V
Power - Max
62.5W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0082 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
62500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2350-2
934057745115
PH8230E T/R
934057745115
PH8230E T/R
NXP Semiconductors
PH8230E_4
Product data sheet
Fig 1.
Fig 3.
(A)
I
10
D
(%)
10
10
I
der
10
120
−1
3
2
1
80
40
10
0
function of mounting base temperature
Normalized continuous drain current as a
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
−1
50
100
Limit R
150
DSon
T
mb
1
= V
03aa23
(°C)
DS
Rev. 04 — 17 November 2009
200
/ I
D
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
N-channel TrenchMOS logic level FET
50
100
100 μ s
1 ms
10 ms
100 ms
t
p
= 10 μ s
V
DS
150
PH8230E
© NXP B.V. 2009. All rights reserved.
(V)
T
mb
003aaa369
03aa15
(°C)
200
10
2
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