PH8230E,115 NXP Semiconductors, PH8230E,115 Datasheet - Page 4

• Manufacturer Part Number: PH8230E,115
• Description: MOSFET N-CH 30V 67A LFPAK
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PH8230E,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 14nC @ 5V
• Input Capacitance (ciss) @ Vds: 1400pF @ 10V
• Power - Max: 62.5W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0082 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 62500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2350-2; 934057745115; PH8230E T/R

NXP Semiconductors
5. Thermal characteristics
Table 5.
PH8230E_4
Product data sheet
Symbol
R
Z
Fig 4.
th(j-mb)
th(j-mb)
(K/W)
10
10
−1
1
10
Transient thermal impedance from junction to mounting base as a function of pulse duration
−4
Thermal characteristics
δ = 0.5
Parameter
thermal resistance from junction to
mounting base
0.05
0.02
0.2
0.1
single pulse
10
−3
Rev. 04 — 17 November 2009
Conditions
see
Figure 4
10
−2
N-channel TrenchMOS logic level FET
10
−1
Min
-
P
Typ
-
t
p
PH8230E
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
003aaa370
Max
2
δ =
t
T
t
p
1
Unit
K/W
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