2N7000 STMicroelectronics, 2N7000 Datasheet - Page 12

• Manufacturer Part Number: 2N7000
• Description: MOSFET N-CH 60V 350MA TO-92
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of 2N7000

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 350mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 2nC @ 5V
• Input Capacitance (ciss) @ Vds: 43pF @ 25V
• Power - Max: 1W
• Mounting Type: Through Hole
• Package / Case: TO-92-3 (Standard Body), TO-226
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.6 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 18 V
• Continuous Drain Current: 0.35 A
• Power Dissipation: 1000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Current, Drain: 0.35 A
• Gate Charge, Total: 1.4 nC
• Package Type: TO-92
• Polarization: N-Channel
• Resistance, Drain To Source On: 1.8 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 7 ns
• Time, Turn-on Delay: 5 ns
• Transconductance, Forward: 0.6 S
• Voltage, Breakdown, Drain To Source: 60 V
• Voltage, Forward, Diode: 1.2 V
• Voltage, Gate To Source: ±18 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3110

Package mechanical data
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Table 8.
Figure 23. SOT23-3L drawing
8162275_Rev_A
Dim.
R1
A1
A2
A3
E1
K1
e1
L1
L2
D
R
A
E
K
e
L
SOT23-3L mechanical data
2.826
1.526
Min.
1.00
0.60
2.60
0.35
0.05
0.05
3°
6°
0
Top view
Typ.
0.95
1.90
0.59
0.25
mm
2N7000, 2N7002
3.026
1.726
Max.
1.25
0.15
1.20
0.70
3.00
0.60
0.20
10°
7°
Bottom view