2N7000 STMicroelectronics, 2N7000 Datasheet - Page 7
![MOSFET N-CH 60V 350MA TO-92](/photos/5/48/54894/to-92_sml.jpg)
2N7000
Manufacturer Part Number
2N7000
Description
MOSFET N-CH 60V 350MA TO-92
Manufacturer
STMicroelectronics
Series
STripFET™r
Specifications of 2N7000
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
2nC @ 5V
Input Capacitance (ciss) @ Vds
43pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.6 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
0.35 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Current, Drain
0.35 A
Gate Charge, Total
1.4 nC
Package Type
TO-92
Polarization
N-Channel
Resistance, Drain To Source On
1.8 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
7 ns
Time, Turn-on Delay
5 ns
Transconductance, Forward
0.6 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±18 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3110
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7000
Manufacturer:
FSC
Quantity:
27 213
Company:
Part Number:
2N7000
Manufacturer:
FAIRCHILD
Quantity:
8 052
Company:
Part Number:
2N7000
Manufacturer:
FSC/NXP/ON/NSC/VISHAY/VISHAY
Quantity:
25 000
Part Number:
2N7000
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
2N7000-D26Z
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
2N7000G
Manufacturer:
ST
Quantity:
20 000
2N7000, 2N7002
Figure 8.
Figure 10. Gate charge vs gate-source voltage Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage
Transconductance
vs temperature
Figure 9.
Figure 13. Normalized on resistance vs
Static drain-source on resistance
temperature
Electrical characteristics
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