2N7000 STMicroelectronics, 2N7000 Datasheet - Page 4
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2N7000
Manufacturer Part Number
2N7000
Description
MOSFET N-CH 60V 350MA TO-92
Manufacturer
STMicroelectronics
Series
STripFET™r
Specifications of 2N7000
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
350mA
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
2nC @ 5V
Input Capacitance (ciss) @ Vds
43pF @ 25V
Power - Max
1W
Mounting Type
Through Hole
Package / Case
TO-92-3 (Standard Body), TO-226
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.6 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 18 V
Continuous Drain Current
0.35 A
Power Dissipation
1000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Current, Drain
0.35 A
Gate Charge, Total
1.4 nC
Package Type
TO-92
Polarization
N-Channel
Resistance, Drain To Source On
1.8 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
7 ns
Time, Turn-on Delay
5 ns
Transconductance, Forward
0.6 S
Voltage, Breakdown, Drain To Source
60 V
Voltage, Forward, Diode
1.2 V
Voltage, Gate To Source
±18 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3110
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2N7000
Manufacturer:
FSC
Quantity:
27 213
Company:
Part Number:
2N7000
Manufacturer:
FAIRCHILD
Quantity:
8 052
Company:
Part Number:
2N7000
Manufacturer:
FSC/NXP/ON/NSC/VISHAY/VISHAY
Quantity:
25 000
Part Number:
2N7000
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
2N7000-D26Z
Manufacturer:
ON/安森美
Quantity:
20 000
Part Number:
2N7000G
Manufacturer:
ST
Quantity:
20 000
Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
I
C
DS(on)
C
GS(th)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
rss
iss
gs
gd
r
f
g
(1)
= 25 °C unless otherwise specified)
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
DS
DS
GS
DD
DD
GS
G
= 250 µA, V
= 125 °C
= 4.7 Ω V
= max rating
= max rating,
= ± 18 V
= V
= 10 V, I
= 4.5 V, I
= 10 V
= 25 V, f = 1 MHz,
= 0
= 5 V
= 30 V, I
= 30 V, I
Figure
Figure
Test conditions
Test conditions
GS
, I
,
16)
17)
D
D
I
D
D
GS
D
D
GS
= 250 µA
= 0.5 A
= 0.5 A
= 1 A,
= 0.5 A
= 0.5 A
= 4.5 V
=0
Min.
Min.
60
1
Typ.
Typ.
0.6
1.4
0.8
0.5
2.1
1.8
43
20
15
6
5
7
8
2
2N7000, 2N7002
Max.
Max.
±100
5.3
10
2
1
3
5
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
Ω
Ω
V
V